&lt;title&gt;Sub-half-micron i-line photolithography process using AZ BARLi&lt;/title&gt;

Johnson, Jeffrey R.; Gandy, T. H.; Stagaman, Gregory J.; Eakin, Ronald J.; Sardella, John C.; Spinner, Charles R.; Liou, Fu‐Tai; Mark, A

doi:10.1117/12.209287

Cited by 6 publications

(3 citation statements)

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“…Commercially available AZ ® MiR TM 701 (14 cps) PR and AZ BARLi ® II200 ARC were used [35,36]. A single PR, single ARC, and PR/ARC bilayer were spin-coated on clean SiO 2 substrates and baked, as shown in the right insets of figures 1(a)-(c), respectively.…”

Section: Methodsmentioning

confidence: 99%

Enhancing the quality of self-organized nanoripples by Ar-ion bombardment of a bilayer system

Yang

Bradley

et al. 2021

Nanotechnology

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Ion bombardment (IB) is a promising nanofabrication technique for producing nanoripples. A critical issue that restricts the application of IB is the limited quality of IB-induced nanoripples. Photoresist (PR) and antireflection coating (ARC) are of technological relevance for lithographic exposure processes. Moreover, to improve the quality of IB-induced self-organized nanoripples, in this study, a PR/ARC bilayer was bombarded at an incidence angle of 50°. The surface normalized defect density and power spectral density, obtained via scanning atomic force microscopy, indicate the superiority of the PR/ARC bilayer nanoripples over those of single PR or ARC layers. The growth mechanism of the improved nanoripples, deciphered via the temporal evolution of the morphology, involves the following processes: (i) formation of a well-grown IB-induced nanoripple prepattern on the PR, (ii) transfer of nanoripples from the PR to the ARC, forming an initial ARC nanoripple morphology for subsequent IB, and (iii) conversion of the initial nonuniform ARC nanoripples into uniform nanoripples. In this unique method, the angle of ion-incidence should be chosen so that ripples form on both PR and ARC films. Overall, this method facilitates nanoripple improvement, including prepattern fabrication for guiding nanoripple growth and sustainable nanoripple development via a single IB. Thus, the unique method presented in this study can aid in advancing academic research and also has potential applications in the field of IB-induced nanoripples.

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Section: Methodsmentioning

confidence: 99%

Enhancing the quality of self-organized nanoripples by Ar-ion bombardment of a bilayer system

Yang

Bradley

et al. 2021

Nanotechnology

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“…Images in Figure 4 illustrate the resist footing in structures with 2 µm dimension when generated by i-line stepper in resist ma-N 1402. The effect of standing wave can be prevented by using a bottom anti reflective coating (BARC) which is used for reducing the reflection of light from the substrate surface [8,9]. For this reason, AZ BARLI II (BARC, from Microchemicals GmbH) was implemented into the resist processing sequence of common processing parameters as given in Table 3.…”

Section: Resist Processing For I-line Steppermentioning

confidence: 99%

Lithographic performance of resist ma-N 1402 in an e-beam/i-line stepper intra-level mix and match approach

SCHMIDT

Heldt²,

Helke³

et al. 2022

37th European Mask and Lithography Conference

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In this paper, we describe a lithographic technique of exposing complex patterns with an advanced resist processing that connects the high resolution of electron beam lithography and the fast exposure of optical i-line stepper lithography via an Intra Level Mix and Match (ILM&M) approach. The key element of our approach is that we use two successive exposures on one single resist layer directly followed by a single resist development. Process and resist characterization of negative tone resist ma-N 1402 as well as a resolution study for each lithographic tools involved. Lithographic performance of negative tone resist ma-N 1402 has shown structures with dimensions of 55 nm with 300 nm pitch for ebeam lithography (VISTEC SB254, shaped beam) and 350 nm structures for i-line stepper (Nikon NSR 2205i11D). Resist footing problem in structures exposed by i-line stepper is solved by introducing a 200 nm thick bottom antireflective coating AZ BARLI II in ILM&M resist processing sequence. A general processing recipe for electron beam/i-line stepper ILM&M with negative tone resist ma-N 1402 is successfully developed and patterns with different dimensions ranging from sub 100 nm to µm scale were reproducibly fabricated on the same resist layer.

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“…A previous paper (3) has analyzed the BARLi® process issues in terms of defect analysis, film planarization, image footing and plasma image transfer. This paper reports on the work carried out at the Centre Commun CNET I SGS-THOMSON at Crolles and focuses on the latitude of the BARLi® process in comparison with the monolayer or AQUATAR® processes for 0.35 im design rules.…”

Section: Introductionmentioning

confidence: 99%

Latitude of the BAR process compared to the monolayer and TAR processes for 0.35-μm design rules at gate level

Andre

Weill

1996

SPIE Proceedings

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The aim of this paper is to investigate experimentally the performances of three photolithographic processes, the monolayer, AQUATAR® and BARLi® processes, for 0.35 jim patterning using the Exposure-Defocus (E-D) Tree technique ('). Parameters of practical importance are considered such as exposure latitude and depth of focus for dense and isolated features, and their overlapping latitudes, i.e. the proximity effect.The influence of the resist thickness (minimum and maximum incoupling thicknesses) and the impact of a 50 rtn sizing of the mask have also been evaluated.Using the BARLi® process, significant improvements have been demonstrated for proximity and CD swing effects. The results highlight the problems of pushing i-line lithography to the 0.35 jim regime and demonstrate that, to achieve acceptable CD control, a BAR process must be used.

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<title>Sub-half-micron i-line photolithography process using AZ BARLi</title>

Cited by 6 publications

References 0 publications

Enhancing the quality of self-organized nanoripples by Ar-ion bombardment of a bilayer system

Enhancing the quality of self-organized nanoripples by Ar-ion bombardment of a bilayer system

Lithographic performance of resist ma-N 1402 in an e-beam/i-line stepper intra-level mix and match approach

Latitude of the BAR process compared to the monolayer and TAR processes for 0.35-μm design rules at gate level

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