Luminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-Doping

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.In this paper, we discuss the magnetic properties of Gd-doped GaN. This diluted magnetic semiconductor shows hysteretic magnetization behavior at room temperature, which is attributed to ferromagnetism with a Curie temperature well above 300 K. However, the experimental results regarding the magnetic properties are not completely consistent and the microscopic origin for the reported magnetic properties is still unclear. We discuss the role of the growth method of the GaN comparing molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) including GaN doped during the growth process with Gd as well as Gd-implanted material. It seems that in general it is easier to obtain hysteretic magnetization behavior for MBE-grown material probably due to the higher oxygen and lower hydrogen content. An exception is Gd-implanted GaN MBE-grown on Si(111) where we observe no ferromagnetism. We will present experiments where by oxygen implantation and annealing the impurity concentration was manipulated. The role of native defects is addressed and new experiments where additional defects have been introduced by nitrogen implantation in MBE-grown GaN:Gd are discussed. We present our results on anomalous Hall effect observed in a Gd-implanted GaN/AlGaN heterostructure.

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Magnetic properties of Gd‐doped GaN

Shvarkov

Ludwig

Wieck

et al. 2014

Physica Status Solidi (b)

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Donor-hydrogen bound exciton in epitaxial GaN

et al. 1999

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An emission, named (D 2 0 ,X), located at ϳ3.48 eV at low temperature, in the near-band-edge spectrum of GaN, was investigated by photoluminescence ͑PL͒. This (D 2 0 ,X) emission is close in energy to the well-studied neutral-donor-bound-exciton (D 0 ,X) line in GaN. They are distinguished by a variety of PL measurements in this study. Excitation power and temperature-dependent studies indicate that this emission is related to a bound exciton complex. Annealing at a relatively low temperature ϳ440°C results in a dramatic reduction of the PL intensity of this emission. A model is proposed that the exciton-binding center responsible for the (D 2 0 ,X) emission consists of a ͑shallow͒ donor-hydrogen complex that is formed in the GaN epilayer during the growth. The annealing at 440°C results in the dissociation of this complex and thus reduces the PL intensity of the (D 2 0 ,X) emission.

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Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0–1.6 µm

et al. 1999

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Luminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-Doping

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Magnetic properties of Gd‐doped GaN

Magnetic properties of Gd‐doped GaN

Donor-hydrogen bound exciton in epitaxial GaN

Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0–1.6 µm

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