Luminescence in porous silicon: the role of confinement and passivation

Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques†

“…The increase in the band-gap E g depends on the dot diameter; with an average dot diameter of around 5 nm, E g = 0.5 eV [14,15]. However, this increase is asymmetric: one-third of the widening is in the valence band, while two-thirds is in the conduction band [16], in which case the variation of the holes barrier should be around 0.2 eV instead of 0.6 eV (= 4.4 − 3.8 eV). One can notice that the electric field calculation was done by considering charge localization at both the top and bottom interfaces with the tunneling oxide.…”

Well width‐dependent electron Raman scattering in ZnS/CdSe cylindrical quantum dot quantum well

“…This is caused by a high anisotropic optical activity due to quantum confinement. 27,28 As the radii decrease, the anisotropic optical activity becomes stronger due to more significant quantum confinement, Figure 6. Raman spectrum of the ZnS/CdSe cylindrical QDQW in the scattering configuration X E e l , E e sz X with various radii.…”

“…The emission spectrum for different sizes of QDQW reveals the anisotropic optical activity due to quantum confinement of this system. 27,28 The spectrum we obtained here could be used to study the electron band structure of such system.…”

“…Anisotropic optical properties in low-dimensional semiconductors has been found. 27,28 Dielectric and quantum confinement effects result in prominent exciton features such as large binding energies and oscillator strengths. 29 In our study, we find that the quantum confinement effects can also intensify the DCS of Raman scattering.…”