Luminescence of as-grown and thermally annealed GaAsN/GaAs

Francoeur, S.; Sivaraman, G.; Qiu, Yn; Nikishin, S. A.; Temkin, H.

doi:10.1063/1.121206

Cited by 159 publications

(94 citation statements)

References 19 publications

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“…This is shown by an intermediate redshift in the PL peak energy in annealing temperature range lower than the optimum temperature. Furthermore, such changes were not accompanied by a shift towards higher Bragg angle for the GaNAs peak in HRXRD, a result different from others [6,7].…”

Section: Introductionmentioning

confidence: 63%

Effect of rapid thermal annealing: red and blue shift in photoluminescence of GaNAs grown by RF plasma-assisted molecular beam epitaxy

Loke

Yoon

et al. 2001

MRS Proc.

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Rapid thermal annealing (RTA) of 1000Å GaNAs films grown on (100) oriented GaAs substrate by radio frequency (RF) plasma assisted solid-source molecular beam epitaxy was studied by low-temperature photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD). Samples with nitrogen content of 13 and 2.2% have shown an overall blueshift in energy of 67.7meV and an intermediate redshift of 42.2meV in the PL spectra when subjected to RTA at 525–850°C for 10min. It is also shown that the sample, which is annealed at temperature range of 700–750°C, has the highest photoluminescence efficiency (1.7–2.1 times increase in integrated PL intensity as compared to the as-grown sample). Reciprocal space mapping of the as-grown GaNAs samples obtained by using triple-crystal HRXRD shows the presence of interstitially incorporated of N atoms with no lattice relaxation in the direction parallel to the growth surface. These results have significant implication on the growth and post-growth treatment of nitride compound semiconductor materials for high performance optoelectronics devices.

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Section: Introductionmentioning

confidence: 63%

Effect of rapid thermal annealing: red and blue shift in photoluminescence of GaNAs grown by RF plasma-assisted molecular beam epitaxy

Loke

Yoon

et al. 2001

MRS Proc.

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“…1(a)] which is attributed to localized excitons emission [8,[18][19][20]. Also similarly to GaNAs, the large localization potential in GaInNAs is at least partly attributed to the composition and strain non−uni− formity of the alloy which originates the N existence.…”

Section: Resultsmentioning

confidence: 95%

Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy

Gholami

Esmaeili

Haratizadeh

et al. 2009

Opto-Electronics Review

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We have investigated optical properties of Ga0.64In0.36N0.006As0.994/GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sample at 150 K. It has been found that PL spectra have a large full width at half maximum (FWHM) value at 2 K. These results are discussed in terms of carrier localization. Additionally, our results suggest decreasing PL integrated intensity in this structure, possibly due to non-radiative recombination. It has been shown that thermal annealing reduces the local strain created by nitrogen. By annealing process, a blue shifted emission can be observed.

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“…These characteristics have been well documented in the past. [11][12][13] Under higher intensity pulsed excitation, the PL from the samples containing 2.8% nitrogen and layer thicknesses greater than 200 nm, changed radically. Above a certain threshold excitation intensity, several narrow, laser-like peaks appeared.…”

Section: Resultsmentioning

confidence: 99%

Epitaxially grown GaAsN random laser

Sun

Gál

Gao

et al. 2003

Journal of Applied Physics

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We have studied the photoluminescence properties of as-grown GaAs 1Ϫx N x epitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission from thick (d Ͼ200 nm͒ GaAs 0.972 N 0.028 layers exhibiting the characteristic lasing properties of random lasers. This is unusual because random lasers have so far only been associated with highly disordered or random media. We believe that high gain in combination with structural inhomogeneities that are evident in these GaAs 0.972 N 0.028 layers, can explain the random lasing in such epitaxial layers.

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Luminescence of as-grown and thermally annealed GaAsN/GaAs

Cited by 159 publications

References 19 publications

Effect of rapid thermal annealing: red and blue shift in photoluminescence of GaNAs grown by RF plasma-assisted molecular beam epitaxy

Effect of rapid thermal annealing: red and blue shift in photoluminescence of GaNAs grown by RF plasma-assisted molecular beam epitaxy

Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy

Epitaxially grown GaAsN random laser

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