Luminescence of thin films of bismuth and lead complex oxide compounds

Bordun, O. M.; Kukharsky, Igor; Antonyuk, V. G.; Dmytruk, Veronika

doi:10.1016/j.radmeas.2007.01.075

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…Based on that, BGO is typically used in X-ray detection for medical image recording, high-energy physics, geophysics exploration, X-ray processing images, among others. However, due to its high fabrication costs, alternative materials have been proposed with similar characteristics [1][2][3][4][5]. It is well known that bismuth silicate (Bi 4 Si 3 O 12 ) is a strong alternative to scintillator candidate not only because material costs can be significantly reduced by replacing GeO 2 by SiO 2 , but also because BSO resembles BGO in several aspects.…”

Section: Introductionmentioning

confidence: 99%

“…Additionally, BSO was reported to show dielectric, pyroelectric, nonlinear optical, and possible ferroelectric effects based on its non-centrosymmetrical crystal structure [2]. BSO has the additional particular interest of the high availability bismuth minerals in Mexico [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…Ternon et al [13] reported the preparation of amorphous thin films from a Si substrate and a BiFeO 3 leading to the formation of bismuth silicates. However, no further details in the formation process or microstructural characteristics are provided [12,13].…”

Section: Introductionmentioning

confidence: 99%

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Bi4Si3O12 thin films for scintillator applications

et al. 2016

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Bismuth silicate Bi 4 Si 3 O 12 or BSO thin films were synthesized by pulsed laser deposition and a subsequent annealing treatment from a Bi-Fe-O and compared with films obtained with a pure Bi 2 O 3 target. BiFe-O amorphous thin films of different thicknesses were deposited on silicon substrates at room temperature and subsequently heat treated at 800°C at different times to study the phase transformations, keeping in all steps a constant oxygen atmosphere. After annealing, Bi-Si-O crystalline phases are formed in all cases with different synthesis kinetics. The Bi-Fe-O target clearly increases the synthesis kinetic of a textured BSO phase having a dissociation and precipitation of homogeneously distributed Fe 2 O 3 particles in the BSO matrix. The key aspects to obtain the Bi 4 Si 3 O 12 stoichiometric phase are both the film thickness and the heat treatment time to allow the reaction between the Bi 2 O 3 from the target and the SiO 2 obtained after the oxidation of the substrate. A deposition time of Bi-Fe-O for 120 and 30 min annealing fulfills the conditions to obtain the Bi 4 Si 3 O 12 stoichiometric composition and thus scintillation performance. The scintillation properties were measured by a fluorescence spectrophotometry. The stoichiometric Bi 4 Si 3 O 12 samples show that under 260 nm excitation the material exhibits a peak emission at 466.6 nm. These Bi 4 Si 3 O 12 thin films crystallize in eulytite phase with cubic structure (a = b = c = 10.291 Å ). The phase content was obtained by Rietveld analysis of X-ray diffraction patterns.

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