Luminescence of ZnO nanocrystals in silica synthesized by dual (Zn, O) implantation and thermal annealing

Abstract

Zinc blende ZnO nanocrystals (NCs) were synthesised in amorphous silica by high-fluence dual (Zn, O) ion implantation and subsequent thermal annealing in air. We observed the formation of core/shell nanoparticles at the depth of maximum Zn concentration as a result of an incomplete oxidation process. The silica matrix with ZnO NCs exhibits an intense white-greenish emission. Low-temperature photoluminescence spectroscopy revealed various radiative recombination mechanisms in the zinc blende ZnO NCs involving intrinsic defects that act as donors and acceptors.

Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

“…Ion-synthesized nanoinclusions of semiconductors such as Si [ 22 ], Sn [ 23 ], ZnO [ 24 ], In 2 O 3 [ 25 ] and many others have been previously reported. However, the ion synthesis of nc-Ga 2 O 3 was practically not reported, except in the case of our work, which demonstrated the possibility of synthesizing such nanocrystals in an Al 2 O 3 matrix [ 26 ].…”

Drastic evolution of point defects in vertically grown ZnO nanorods induced by lithium ion implantation

“…5a shows a strong near-band edge (NBE) emission at B3.28 eV and a broad defect level (DL) emission in the region 1.70 to 2.80 eV centered at B2.2 eV. [78][79][80] A drastic reduction in the intensity of the NBE emission (I NBE ) is observed as the implantation fluence increases resulting in the minimum intensity for the sample implanted with the highest fluence (7 Â 10 15 ions per cm 2 ) (Fig. 5b).…”

Structural and optical properties of Zn-implanted silica: effect of fluence and annealing

“…To date, the ion implantation method has been successfully applied to synthesize ZnO nanocrystals in a silica matrix [18][19][20][21][22][23][24][25][26][27][28]. It was shown the size of ZnO nanocrystals in the matrix, and hence the position of the UV luminescence band, can be controlled by adjusting the implantation fluence [18].…”