Luminescence properties of Mn2+ doped Zn2SiO4 phosphor films synthesized by combustion CVD

Kang, Zhitao; Liu, Y.; Wagner, B. K.; Gilstrap, Richard A.; Liu, M.; Summers, Christopher J.

doi:10.1016/j.jlumin.2005.12.066

Cited by 33 publications

(14 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…nanoparticles). 6,7 To date, a number of gas-phase and/or instrumentation-intensive protocols including but not limited to silicon etching, 8 chemical vapor deposition (CVD), 9,10 vapor-liquid-solid (VLS), 11 and electrospinning 12 have been used to yield either highly-aligned 1D nanowire or 3D nanowire bundle arrays of Zn 2 SiO 4 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis, properties, and formation mechanism of Mn-doped Zn₂SiO₄nanowires and associated heterostructures

Liu

Moronta

et al. 2018

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

In this work, we have put forth a facile hydrothermal approach to synthesize an array of one-dimensional (1D) Mn-doped Zn2SiO4 nanostructures. Specifically, we have probed and correlated the effects of controllable reaction parameters such as the pH and Mn dopant concentrations with the resulting crystal structures and morphologies of the products obtained. Based upon our results, we find that careful tuning of the pH versus the Mn dopant level gives rise to opposite trends with respect to the overall size of the resulting one-dimensional nanostructures. Significantly, we have highlighted the role of the Mn dopant ion concentration as a potentially generalizable reaction parameter in solution-based synthesis for controlling morphology and hence, the observed optical behavior. Indeed, such a strategy can be potentially generalized to systems such as but not limited to Mn-doped ZnS, CdS, and CdSe quantum dots (QD), which, to the best of our knowledge, denote promising candidates for a variety of optoelectronic applications. Specifically, we have carefully optimized the synthesis conditions in order to generate a series of chemically well-defined Mn-doped Zn2SiO4 not only possessing Mn concentrations ranging from 3% to 8% but also characterized by highly crystalline, monodisperse wire-like motifs measuring ∼30 nm in diameter and ∼700 nm in length. Optically, the photoluminescence signals associated with the 1D series yielded a volcano-shaped relationship between PL intensities and the Mn dopant level. In additional experiments, we have immobilized CdSe quantum dots (QDs) onto the external surfaces of our as-synthesized Mn-doped Zn2SiO4 nanowires, in order to form novel composite heterostructures. The optical properties of the CdSe QD-Mn:Zn2SiO4 heterostructures have been subsequently examined. Our results have demonstrated the likely co-existence of both energy transfer and charge transfer phenomena between the two constituent components of our as-prepared composites. Specifically, when both components are photoexcited, both energy transfer and charge transfer were found to plausibly occur, albeit in opposite directions. When the CdSe QDs are excited alone for example, charge transfer probably takes place from the CdSe QDs to the dopant Mn2+ ions. We believe that our as-processed heterostructures are therefore promising as a tunable light-harvesting motif. Essentially, these materials have broadened the effective light absorption range for optical 'accessibility', not only through their incorporation of dopant-tunable Zn2SiO4 possessing complementary absorption properties to those of the QDs but also through their integration of CdSe QDs with size-tailorable optical behavior.

show abstract

Section: Introductionmentioning

confidence: 99%

Synthesis, properties, and formation mechanism of Mn-doped Zn₂SiO₄nanowires and associated heterostructures

Liu

Moronta

et al. 2018

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…It has been investigated as one of the promising candidates for flat panel displays as cathodoluminescence and electroluminescence phosphors owing to efficient luminescence and excellent chemical stability as well as wide-energy band gap (5.5 eV) [4,5]. The Mn 2+ activator causes the strong green emission at 525 nm peak which results from the optically forbidden 4 T- 6 A transition between 3d electrons within Mn 2+ ion occupied on Zn 2+ site [6,7]. The Zn2SiO 4 :Mn 2+ host has a semiconducting property due to the formation of intrinsic oxygen or zinc vacancies acting as donor or acceptor [8].…”

Section: Introductionmentioning

confidence: 99%

P‐213: Late‐News‐Poster: Electroluminescence of Oxide Phosphor in Metal‐Oxide‐Semiconductor Structure

Kang

Park

et al. 2020

Symp Digest of Tech Papers

View full text Add to dashboard Cite

The green Zn2SiO4:Mn 2+ phosphor film for electroluminescence (EL) was fabricated through a thermal annealing process of spin coated film on n-type silicon wafer as a semiconductor electrode. The oxide phosphor was placed in metal-oxidesemiconductor (MOS) structure, where indium tin oxide was used as a top transparent electrode. The EL device showed the high-purity green emission spectrum at 525 nm. Its luminancevoltage and frequency dependence showed the increasing trend up to 100 V and 1 kHz.

show abstract

“…11,12 With a wide band gap of 5.5 eV, zinc silicate (Zn 2 SiO 4 ) is a promising multifunctional material with proven applications as a phosphor host in medical imaging, in cathode ray tubes, electronic insulators, paints and fluorescent lamps. [13][14][15] Recently, 1-D Zn 2 SiO 4 nanostructures such as nanowires and nanorods were fabricated and their optical, chemical, water purification and sensing properties were studied. [16][17][18] Willemite (Zn 2 SiO 4 ) is a well-known host material for applications in the field of phosphors for light emitting devices.…”

Section: Introductionmentioning

confidence: 99%

Anomalous optical and magnetic behavior of multi-phase Mn doped Zn₂SiO₄ nanowires: a new class of dilute magnetic semiconductors

et al. 2014

View full text Add to dashboard Cite

We present the synthesis of Mn doped Zn(2)SiO(4) dense nanowire bundles using the VLS mode of growth with unusual optical and magnetic properties. The synthesized Zn(2)SiO(4) nanowires were identified with two phases, α-Zn(2)SiO(4) as the major phase and β-Zn(2)SiO(4) as the minor phase. XPS studies confirmed that Zn(2)SiO(4) nanowires were Zn rich and Mn doped. Temperature dependent photoluminescence (PL) measurements showed three distinct emission bands: green, yellow and red due to Mn doping in the α-phase, β-phase and the substitution of Si with Mn in the α-phase, respectively. The PL analysis showed that these emission bands followed anomalous Berthelot-type behavior. The carrier escape energies were 70 ± 3 meV, 49 ± 2 meV and 65 ± 4 meV for the 530, 570 and 660 nm bands, respectively, while the radiation rates (Er =) were 1.0 ± 0.4 meV, 3.10 ± 1.10 meV and 1.4 ± 0.4 meV corresponding to the three respective bands. Mn doping of Zn(2)SiO(4) nanowires induced ferromagnetism, which was observed above room temperature, with a Curie temperature well above 380 K. The observation of magnetic behavior in this class of semiconductors has potential applications in high temperature spintronics and magneto-optical devices.

show abstract

Luminescence properties of Mn2+ doped Zn2SiO4 phosphor films synthesized by combustion CVD

Cited by 33 publications

References 6 publications

Synthesis, properties, and formation mechanism of Mn-doped Zn₂SiO₄nanowires and associated heterostructures

Synthesis, properties, and formation mechanism of Mn-doped Zn₂SiO₄nanowires and associated heterostructures

P‐213: Late‐News‐Poster: Electroluminescence of Oxide Phosphor in Metal‐Oxide‐Semiconductor Structure

Anomalous optical and magnetic behavior of multi-phase Mn doped Zn₂SiO₄ nanowires: a new class of dilute magnetic semiconductors

Contact Info

Product

Resources

About

Luminescence properties of Mn2+ doped Zn2SiO4 phosphor films synthesized by combustion CVD

Cited by 33 publications

References 6 publications

Synthesis, properties, and formation mechanism of Mn-doped Zn2SiO4nanowires and associated heterostructures

Synthesis, properties, and formation mechanism of Mn-doped Zn2SiO4nanowires and associated heterostructures

P‐213: Late‐News‐Poster: Electroluminescence of Oxide Phosphor in Metal‐Oxide‐Semiconductor Structure

Anomalous optical and magnetic behavior of multi-phase Mn doped Zn2SiO4 nanowires: a new class of dilute magnetic semiconductors

Contact Info

Product

Resources

About

Synthesis, properties, and formation mechanism of Mn-doped Zn₂SiO₄nanowires and associated heterostructures

Synthesis, properties, and formation mechanism of Mn-doped Zn₂SiO₄nanowires and associated heterostructures

Anomalous optical and magnetic behavior of multi-phase Mn doped Zn₂SiO₄ nanowires: a new class of dilute magnetic semiconductors