P‐213: Late‐News‐Poster: Electroluminescence of Oxide Phosphor in Metal‐Oxide‐Semiconductor Structure

Abstract

The green Zn2SiO4:Mn 2+ phosphor film for electroluminescence (EL) was fabricated through a thermal annealing process of spin coated film on n-type silicon wafer as a semiconductor electrode. The oxide phosphor was placed in metal-oxidesemiconductor (MOS) structure, where indium tin oxide was used as a top transparent electrode. The EL device showed the high-purity green emission spectrum at 525 nm. Its luminancevoltage and frequency dependence showed the increasing trend up to 100 V and 1 kHz.

Lower‐Voltage Electroluminescence of Green Zinc Silicate on SiOx Interface in Metal–Oxide–Semiconductor Structure

“…This condition makes film deposition and patterning through wet etching difficult with sulfide-based phosphors. [4][5][6] The efforts to search for oxide phosphors with higher efficiency, chemical stability, and moisture resistance are urgently required. [6,7] Oxide phosphors are the most favorable candidates for display materials because they have preeminent optical transmissivity, especially in the visible region.…”

“…[4][5][6] The efforts to search for oxide phosphors with higher efficiency, chemical stability, and moisture resistance are urgently required. [6,7] Oxide phosphors are the most favorable candidates for display materials because they have preeminent optical transmissivity, especially in the visible region. In particular, Mn 2þ -activated Zn 2 SiO 4 (ZSO) is an famous candidate among EL oxide phosphors because of its attribute of emission of a green spectrum peaking at 525 nm and superb stability in chemicals with a wide energy bandgap (5.5 eV).…”

“…In particular, Mn 2þ -activated Zn 2 SiO 4 (ZSO) is an famous candidate among EL oxide phosphors because of its attribute of emission of a green spectrum peaking at 525 nm and superb stability in chemicals with a wide energy bandgap (5.5 eV). [8][9][10][11][12][13][14][15][16][17] The green emission of the ZSO phosphor is attributed to the optically forbidden transition of 4 T- 6 A between 3d electrons on the Zn 2þ site occupied by Mn 2þ ions. [17] Furthermore, the ZSO host has a semiconducting property due to the formation of intrinsic oxygen or zinc vacancies acting as a donor or acceptor, applied as a transparent conductive oxide.…”