Magnetic and optical properties of Ga1−xMnxN grown by metalorganic chemical vapour deposition

Kane, Matthew H.; Asghar, Ali; Vestal, Christy R.; Straßburg, Martin; Senawiratne, Jayantha; Zhang, Z J; Dietz, N.; Summers, C. J.; Ferguson, Ian T.

doi:10.1088/0268-1242/20/3/l02

Cited by 46 publications

(40 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…3, providing clear evidence that the delta Mn-doped sample is ferromagnetic at room temperature. The coercivity is about 170 Oe, this value is higher than that of homogenously Mn-doped Ga 1Àx Mn x N grown by MOCVD (about 50-100 Oe) [8,9]. …”

Section: Resultsmentioning

confidence: 99%

Room temperature ferromagnetism of GaN:Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-doping

Chen¹,

Su²,

Yang³

et al. 2007

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Room temperature ferromagnetism of GaN:Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-doping

Chen¹,

Su²,

Yang³

et al. 2007

Journal of Crystal Growth

View full text Add to dashboard Cite

“…The amount of TM incorporated was calibrated by secondary ion mass spectroscopy measurements (SIMS) of bulk layers [6]. Mn (or Fe) was varied from 0% to 3%, as beyond this composition phase segregation effects have been observed in bulk Ga 1-x TM x N layers [7].…”

Section: Contributedmentioning

confidence: 99%

Growth and magnetization study of transition metal doped GaN nanostructures

Gupta

Kang

Kane

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

This work presents the MOCVD growth and characterization of optically active GaN nanostructures which have been doped with the transition metals manganese and iron for potential spintronic applications. Introduction of both these transition metals in GaN nanostructures enhanced the nucleation of the nanostructures resulting in reduced lateral dimensions and increased nanostructure density. Both Ga1–xMnxN and Ga1–xFexN nanostructures showed hysteresis behaviour at 5 K. Further VSM measurements on Ga1–xFexN nanostructures at 300 K showed a hysteresis curve with a reduced coercive filed and displayed superparamagnetic behaviour. These magnetically active nanostructures are promising and provide an incentive to further study them with the aim of eventually utilizing them in spintronic applications and improving device efficiency. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…GaMnN nanostructures were grown by introducing Mn to trimethylgallium and ammonia flows under the optimal conditions for the formation of nanostructures. The amount of Mn incorporated was calibrated by secondary ion mass spectroscopy measurements of bulk GaMnN layers [21]. Mn was varied from 0.0 to 2.0%, as beyond this composition phase segregation effects have been observed in bulk GaMnN layers [22].…”

Section: Gamnn and Gafen Nanostructuresmentioning

confidence: 99%

Dilute magnetic bulk GaN semiconductor and nanostructures

Ferguson

2007

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Ga 1-x Mn x N and Ga 1-x Fe x N thin films and nanostructures were grown by metalorganic chemical vapor deposition. High resolution X-ray diffraction studies demonstrate that the material is high quality single phase similar in quality and lattice parameter to unalloyed GaN. The as-grown epitaxial films exhibit ferromagnetic hysteresis at room temperature as measured by SQUID magnetometry; the strength of the observed volume magnetization is almost an order stronger in similarly grown Mn-doped samples relative to Fe-doped samples. Raman spectroscopy revealed no significant strain introduced by the transition metal incorporation and a low free carrier concentration, and the most prominent additional mode in Mn-doped GaN is attributed to vacancy-related local vibrational modes of the GaN host lattice. A novel growth method has been developed to produce GaN-based nanostructures using a two-step process (GaN deposition followed by an activation step) at low growth temperatures (<850 o C) and V-III ratios (<30). GaMnN nanostructures were grown by introducing Mn to GaN flows under optimal conditions for the formation of nanostructure without the need of an activation step. Manganese icorporation has the tangential benefit that Mn acts as an anti-surfactant, and promotes the low-temperature nucleation of these nanostructures. In addition, experiments have been conducted in which Fe was incorporated into GaN nanostructures at 800 ºC, and room temperature ferromagnetic behavior of GaFeN nanostructures was observed. Atomic force microscopy measurements revealed that Fe, like Mn, affected the surface morphology of the nanostructures by reducing the nanostructure size. These nanostructures showed a systematic variation in coercive field and saturation magnetization with Fe incorporation.

show abstract

Magnetic and optical properties of Ga_1−xMn_xN grown by metalorganic chemical vapour deposition

Cited by 46 publications

References 28 publications

Room temperature ferromagnetism of GaN:Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-doping

Room temperature ferromagnetism of GaN:Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-doping

Growth and magnetization study of transition metal doped GaN nanostructures

Dilute magnetic bulk GaN semiconductor and nanostructures

Contact Info

Product

Resources

About