Magnetic and transport properties of Mn-implanted Ge/Si quantum dots

Study of the local micro-structure and magnetic and transport properties of CrxGe1−x thin films

“…3a, a linear fit is obtained for the Arrhenius plot of the Cr 0.20 Ge 0.80 film data at high temperatures (300-380 K), from which the activation energy E a E0.016 eV was obtained. This result confirms that Cr ions act as shallow level acceptors [18,19]. As shown in Fig.…”

Doping silicon nanocrystals and quantum dots

“…109 Based upon the forgoing there are several areas that will benefit from future research: (1) it is important to determine what the inherent doping of NCs are as a function of synthetic methods, this is particularly true for solution routes; (2) where dopants are present within the crystal lattice (c-type) is the distribution between individual NCs uniform, and if not does this matter with regard to device performance; (3) if doping occurs with matrix (m-type) what levels and distribution is needed to provide effective doping? Finally, it is worth noting that while extensive studies on silicon NCs have been reported, there is only a few studies on their germanium analogues, [110][111][112][113][114] and there is insufficient work to determine whether similar approaches can be applied. However, this represents an interesting area of future research.…”