Cobalt‐boron alloy films were successfully prepared by electroless plating and characterized by AES, TEM, DSC, and VSM techniques. A bath suitable for room temperature electroless plating was developed. The plating rate was found to be dependent on pH , Co++ concentration, and bath temperature, while the composition of the deposited films was not. The microstructure of the as‐deposited films is characteristic of clusters of aggregating cells and was established to be amorphous with soft magnetic properties. After annealing at 300°C for 1h, the amorphous films were transformed to Co (hcp) phase.
normalCoB
,
Co2B
, Co (fcc), stacking faults, and twins were visible for the films subjected to annealing temperatures above 400°C. The saturation magnetization, remanence, and intrinsic coercivity of optimally annealed films are:
σs=106 normalemu/normalg
,
σr=54 normalemu/normalg
, and
normalHci=250 normalOe
. The possible mechanism of autocatalytic reactions, composition, and structure of the films as a function of preparation variables and the detailed transformation during annealing are also discussed.