Magnetic exchange coupling in bilayers of two epitaxial ferromagnetic oxides

Singamaneni, Srinivasa Rao; Prater, J. T.; Narayan, J.

doi:10.1016/j.cossms.2015.03.002

Cited by 4 publications

(3 citation statements)

References 14 publications

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“…[14,[7][8][9][10][11] The spin magnetic moment of this sample is estimated at 1.2 µ B per Ru 4+ ion, consistent with previously reported values (1.1-1.6 µ B per Ru 4+ ion) for the bulk SRO thin films. As shown by the curve in red, the sample with only LCMO layer exhibits characteristic [4,5] T C at about 240 K. The saturation magnetization is estimated at 3.…”

Section: Functional Oxides Research Lettersupporting

confidence: 77%

“…As shown by the curve in red, the sample with only LCMO layer exhibits characteristic [4,5] T C at about 240 K. The saturation magnetization is estimated at 3. [6,[7][8][9][10][11] on relaxed SRO thin films. The M-H curve (in red) recorded from LCMO layer also reveals a clear saturation behavior characterized by H c of 625 Oe (see inset of Fig.…”

Section: Functional Oxides Research Lettermentioning

confidence: 99%

“…In these heterostructures interesting magnetic properties such as antiferromagnetic exchange coupling and its cross-over to ferromagnetic exchange coupling [7][8][9][10][11] have been identified. Despite the fact that La 0.7 Ca 0.3 MnO 3 (LCMO) shares similar electronic and magnetic properties with LSMO, there has been no report on the epitaxial growth and investigation of magnetic properties of LCMO when it is interfaced with SRO layer on any substrate.…”

Section: Introductionmentioning

confidence: 99%

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Ferromagnetic oxide heterostructures on silicon

Singamaneni

Prater

et al. 2016

MRS Communications

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Heterostructures consisting of two ferromagnetic oxides La 0.7 Ca 0.3 MnO 3 (LCMO) and SrRuO 3 (SRO) were epitaxially grown by pulsed laser deposition onto a silicon (Si) substrate buffered by SrTiO 3 (STO)/MgO/TiN. The x-ray scans and electron-diffraction patterns reveal the epitaxial nature of all five layers. From transmission electron microscopy, the thicknesses of the LCMO and SRO layers were estimated to be ∼100 and ∼200 nm, respectively. The magnetic properties of individual SRO and LCMO layers are in good agreement with the previous studies reported for those individual layers deposited on lattice-matched substrates, such as STO. The LCMO/SRO heterostructures showed enhanced switching field (from 6008 to 7600 Oe), which may originate from the bulk part of the heterostructure. The ability to grow these multifunctional structures on Si provides a route for wafer scale integration with Si, in contrast to oxide substrates that are not suitable for CMOS integration for microelectronics and spintronics applications.

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