Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

Xiong, Chengyue; Lu, Ziyao; Yin, Siqi; Mou, Hongming; Zhang, Xiaozhong

doi:10.1063/1.5063734

Cited by 7 publications

(2 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Unlike physical sports, smart sports include chess, go, and chess. Smart sports can exercise and improve participants' thinking ability, judgment, reaction ability, attention, and perseverance, thus promoting their overall development [12].…”

Section: Smart Sports Based On New Semiconductormentioning

confidence: 99%

Sports Smart Data Writing Based on New-Type Semiconductor Nonvolatile Storage Mode

Guo¹

2022

Scientific Programming

View full text Add to dashboard Cite

The development of smart sports has just taken a new chapter. Based on the digital transformation in all aspects today, the data content of smart sports with a large number of branches is huge. However, the current storage system, an external storage disk, has not adapted to the computer’s increasingly high requirements for IO performance; DRAM- and SRAM-based memory and cache also face power consumption and capacity expansion problems; the storage system on the overall performance of the computer system constraints is increasingly prominent. Based on the data storage of smart sports for digital transformation, this article proposes a smart for the writing of sports data; a better cache method has been explored under the new semiconductor nonvolatile cache mode. The experimental results in this article show that by comparing single-value and dual-value STT-RAM (spin-torque transfer RAM) caches, the three-valued cache with hierarchical mapping of page swap design has a significant improvement in IPC performance under each test load, compared with single-value STT-RAM caches. Compared with the value type, the average performance has increased by 16%; the overall energy consumption including memory has been reduced by an average of 12.3%.

show abstract

Section: Smart Sports Based On New Semiconductormentioning

confidence: 99%

Sports Smart Data Writing Based on New-Type Semiconductor Nonvolatile Storage Mode

Guo¹

2022

Scientific Programming

View full text Add to dashboard Cite

show abstract

“…The high diffusion coefficient of Ag in oxide RS layers is helpful for fabricating resistive memories with lower switching voltages and can increase the device yield [24,25]. Resistive memories fabricated using Ag-based structures such as Ag/SiO x /Ti, Pt/TiO 2 /Ag nanowire, and Ag/Agdoped chitosan/Pt memories were reported in [26][27][28]. The RS behaviors are attributed to the formation of Ag conductive paths in the RS layers.…”

Section: Introductionmentioning

confidence: 99%

Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

Hsu¹,

Zhang²,

Jhang³

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This paper demonstrates write-once-read-many-times (WORM) behavior of an Ag/CuO/n + -Si memory device. The CuO resistive switching layer with a thickness of 9.7 nm was prepared using a sol-gel process. The device shows a low conduction current of 10 −10 A at a read voltage of 1 V. A sudden current increase is observed when the voltage increases to ∼3 V, corresponding to a resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS). After that, the device remains in the LRS. Degradation of the HRS and the LRS is not observed for 10 4 read cycles. The HRS/LRS resistance ratio is 10 6 , and the data retention time is over 10 5 s. The abrupt current increase cannot be triggered by a negative bias. The formation of Ag conductive bridges in the CuO layer is responsible for the resistance switching. Statistical analyses are performed to study the distributions of the set voltages and the resistances in the HRS and LRS. The effect of the compliance current on the operating current of the Ag/CuO/n + -Si WORM memory is also investigated. The carrier transport mechanisms are found to be dominated by Schottky emission, Ohmic, and SCLC conductions. The energy barrier is 1.066 eV, which is extracted by Schottky emission analysis.

show abstract

Effects of magnetic field on resistive switching in multiferroic based Ag/BiFeO3/FTO RRAM device

Jena

Sahoo

Mohanty

2020

Applied Physics Letters

View full text Add to dashboard Cite

We report the effects of the magnetic field on resistive switching behavior in the Ag/BiFeO3/FTO RRAM device through conventional I–V characteristics. The switching of the device from a high resistance state (HRS) to a low resistance state (LRS) at a certain threshold voltage (Vt) evidences a shift under the magnetic influence. The shifting of Vt toward higher voltage is due to the appearance of the Lorentz force and magnetoelectric effect when the magnetic field is applied perpendicular to the flow of current. The resistance of the HRS and LRS increases simultaneously under the application of the magnetic field due to the induced Hall resistance effect. The OFF/ON ratio∼12, which is repeatable for 100 multiple cycles. The discrete RESET state of the device is achieved by pulse-width and pulse-height modulation. Substantially, the resistance of these states increases systematically under the action of the magnetic field. The control of resistance states with the pulse-height and magnetic field in Ag/BiFeO3/FTO shows promise for future multilevel non-volatile memory technology.

show abstract

Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

Cited by 7 publications

References 25 publications

Sports Smart Data Writing Based on New-Type Semiconductor Nonvolatile Storage Mode

Sports Smart Data Writing Based on New-Type Semiconductor Nonvolatile Storage Mode

Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

Effects of magnetic field on resistive switching in multiferroic based Ag/BiFeO3/FTO RRAM device

Contact Info

Product

Resources

About