2005
DOI: 10.1103/physrevb.72.100102
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Magnetic-field-induced transition in the lattice modulation of colossal magnetoelectricGdMnO3andTbMn

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Cited by 134 publications
(104 citation statements)
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“…7,8 Unlike YMnO 3 and HoMnO 3 which have a collinear magnetic structure, in TMO the magnetic interactions between the noncolinear spins breaks the spatial inversion symmetry and induces an electrical polarization. [9][10][11][12] Furthermore, TMO exhibits distinct magnetic phases in various temperature regimes: the collinear spin order of Mn ions sets in at a Neel temperature T N of 41 K; the ferroelectric phase emerges in the bc-spiral spin state below 28 K, and concurrently the magnetic and the polarization vectors orientate along the b and the c axis, respectively; finally, a phase transition at about 7 K appears as a result of the magnetic ordering of the Tb sublattice. 4 As the first step towards the oxide electronics, a wide range of transition metal oxides are exploited in various device concepts, such as Schottky-like junctions, [13][14][15][16] field-effect transistors, 17,18 a Email: tomwu@ntu.edu.sg; rmwang@buaa.edu.cn 2158-3226/2011/1(4)/042129/11 C Author(s) 2011 1, 042129-1 and p-n junctions, [19][20][21][22][23] which are the building blocks in conventional semiconductor electronics.…”
Section: Introductionmentioning
confidence: 99%
“…7,8 Unlike YMnO 3 and HoMnO 3 which have a collinear magnetic structure, in TMO the magnetic interactions between the noncolinear spins breaks the spatial inversion symmetry and induces an electrical polarization. [9][10][11][12] Furthermore, TMO exhibits distinct magnetic phases in various temperature regimes: the collinear spin order of Mn ions sets in at a Neel temperature T N of 41 K; the ferroelectric phase emerges in the bc-spiral spin state below 28 K, and concurrently the magnetic and the polarization vectors orientate along the b and the c axis, respectively; finally, a phase transition at about 7 K appears as a result of the magnetic ordering of the Tb sublattice. 4 As the first step towards the oxide electronics, a wide range of transition metal oxides are exploited in various device concepts, such as Schottky-like junctions, [13][14][15][16] field-effect transistors, 17,18 a Email: tomwu@ntu.edu.sg; rmwang@buaa.edu.cn 2158-3226/2011/1(4)/042129/11 C Author(s) 2011 1, 042129-1 and p-n junctions, [19][20][21][22][23] which are the building blocks in conventional semiconductor electronics.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, the field dependence of the Mn-spin spiral is difficult to analyse as single-ion anisotropy terms of Mn and R need to be taken into consideration as well as the R-Mn interaction. The fact that in this P a phase Mnspins order commensurately with τ = 1 4 b * [15,16] render the cycloidal flop model even more complex. For such a commensurate spin structure it has been proposed that spin frustration and super-exchange induce lattice distortions that break inversion symmetry thereby generating the observed direction of the polarization at high field [13,14,15].…”
mentioning
confidence: 99%
“…Systematic investigations of the magnetic 10,11 and multiferroic properties 1,2,12,13 of the rare-earth manganites RMnO 3 (R = Gd, Tb, Dy) have revealed a transition from a paramagnet (PM) into an incommensurate antiferromagnet (IC-AFM), and subsequently into a canted-antiferromagnetic (CA-AFM) structure in GdMnO 3 or a commensurate antiferromagnetic (C-AFM) phase in TbMnO 3 and DyMnO 3 . At the lock-in transition from the IC-AFM to the C-AFM, ferroelectricity is induced 1,2,12 .…”
mentioning
confidence: 99%