The DCM dye doped organic electroluminescence devices with structure of ITO/NPB/Alq 3 : DCM/Alq 3 /LiF/Al were fabricated. From 15 K to room temperature, the magnetic field dependent of electroluminescence (MEL) of devices was investigated. Our observations indicated that the MEL is composed of two effects in different regimes: a low field (0≤B≤40 mT) effect and a high field (B > 40 mT) effect. For undoped devices, the low field effect exhibits a rapid rising with the increasing field, and the high field effect shows a slow increase and gradually saturates at room temperature. For doped devices, the low field rapid increase is also present, whereas the high field effect displays a decrease with the increasing field. The larger the injection current is, the more apparent the high field decrease is. In addition, the doped device demonstrates less temperature dependence of the high field effect than undoped device, although the undoped devices also present high field decrease of electroluminescence at low temperatures (T≤150 K). Based on the energy level trapping effect due to dye doping and magnetic field modulated triplet exciton annihilation, the experimental results are carefully explained.
dye doping, magnetic field dependent of electroluminescence, energy level traps, triplet exciton annihilationThe magnetic field effects (MFEs) in organic semiconductor devices have recently become a hot research focus in materials science [1][2][3][4][5][6]. Since giant magneto-resistance (GMR) was observed in organic spin-valve [1-3], novel magnetic field dependent of current (MC) and magnetic field dependent of electroluminescence (MEL) have been reported in organic light-emitting devices (OLEDs) where no magnetic layers were contained, the change rate of luminescence and current can reach about 25% and 50%, respectively [4]. And it is suggested that the signs of MC can be modulated between positive and negative by varying the devices structures [5] or even simply by altering the bias [7]. Several possible models have been proposed to explain these MFEs, such as Bipolaron mechanism [8], exciton-charge reaction mechanism [9], triplet-triplet annihilation process (TTA S*) →[10] and magnetic field modulated hyperfine interaction [11]. Relevant work has been carried out by several groups [11][12][13][14][15][16][17][18][19][20][21]. In our latest study on the MFEs in pure Alq 3 based OLEDs [22], we found that the MEL shows a sharp increase at low fields and followed by a significant decrease at high fields more than about 40 mT at low temperature (T≤150 K) and large injection current. If current density and applied field further increased, the luminescence intensity would drop below its zero-field value. The effects were attributed to the field modulated exciton ratio between singlet and triplet configuration and field mediated TTA S* → process. Up to now, the MFEs of OLEDs were mainly focused on the low field range of undoped systems. Although Wu et al. [23] and Prigodin et al. [24] have studied the influence of strong spin-o...