Nanomagnetic and Spintronic Devices for Energy‐Efficient Memory and Computing 2016
DOI: 10.1002/9781118869239.ch5
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Magnetic Tunnel Junction Based Integrated Logics and Computational Circuits

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Cited by 3 publications
(1 citation statement)
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“…Any non-volatile memory technology can be used as a PIM substrate, including RRAM [144] and PC-RAM [75]. In this work, we focus on Magnetoresistive RAM (MRAM) [99,141] which features both high density and high endurance. Due to its nearly ideal properties, MRAM can even be considered as a universal memory replacement [31] and a few commercial products are already available [1,2].…”
Section: Non-volatile Pimmentioning
confidence: 99%
“…Any non-volatile memory technology can be used as a PIM substrate, including RRAM [144] and PC-RAM [75]. In this work, we focus on Magnetoresistive RAM (MRAM) [99,141] which features both high density and high endurance. Due to its nearly ideal properties, MRAM can even be considered as a universal memory replacement [31] and a few commercial products are already available [1,2].…”
Section: Non-volatile Pimmentioning
confidence: 99%