Magnetism of solids resulting from spin polarization of p orbitals

Volnianska, O.; Bogusławski, P.

doi:10.1088/0953-8984/22/7/073202

Cited by 168 publications

(130 citation statements)

References 127 publications

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“…This aspect is in correlation with experimental results obtained from various experimental studies [51][52][53][54][55][56][57][58]. Mg vacancies help to retain local magnetic moments in this material irrespective of the concentration [63][64][65][66][67][68][69]. The origin of magnetic moments associated with Mg vacancies is explained as follows:…”

Section: Mg Vacancy As a Source Of Magnetismsupporting

confidence: 85%

d° Ferromagnetism of Magnesium Oxide

Singh

Chae

2017

Condensed Matter

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Magnetism without d-orbital electrons seems to be unrealistic; however, recent observations of magnetism in non-magnetic oxides, such as ZnO, HfO 2 , and MgO, have opened new avenues in the field of magnetism. Magnetism exhibited by these oxides is known as d • ferromagnetism, as these oxides either have completely filled or unfilled d-/f-orbitals. This magnetism is believed to occur due to polarization induced by p-orbitals. Magnetic polarization in these oxides arises due to vacancies, the excitation of trapped spin in the triplet state. The presence of vacancies at the surface and subsurface also affects the magnetic behavior of these oxides. In the present review, origins of magnetism in magnesium oxide are discussed to obtain understanding of d • ferromagnetism.

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Section: Mg Vacancy As a Source Of Magnetismsupporting

confidence: 85%

d° Ferromagnetism of Magnesium Oxide

Singh

Chae

2017

Condensed Matter

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“…From DFT total-energy calculations of different spin confi gurations on Si(553)-Au, we fi nd antiferromagnetic coupling ( J || = 15 meV) along the steps and weaker, ferromagnetic coupling ( J Ќ = − 0.3 meV) across the steps (these values may be different in methods that treat electron correlation explicitly; see the discussion in Volnianska et al 35 ). Intriguingly, we fi nd that the magnitude, and even the sign, of these couplings can be changed by doping electrons or holes into the Si(553)-Au surface states (see Supplementary Methods and Supplementary Fig.…”

Section: Discussionmentioning

confidence: 94%

Intrinsic magnetism at silicon surfaces

2010

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It has been a long-standing goal to create magnetism in a non-magnetic material by manipulating its structure at the nanoscale. Many structural defects have unpaired spins; an ordered arrangement of these can create a magnetically ordered state. In this article we predict theoretically that stepped silicon surfaces stabilized by adsorbed gold achieve this state by selfassembly, creating chains of polarized electron spins with atomically precise structural order. The spins are localized at silicon step edges having the form of graphitic ribbons. The predicted magnetic state is supported by recent experimental observations, such as the coexistence of double-and triple-period distortions and the absence of edge states in photoemission. Ordered arrays of surface spins can be accessed by probes with single-spin sensitivity, such as spinpolarized scanning tunnelling microscopy. The integration of structural and magnetic order is crucial for technologies involving spin-based computation and storage at the atomic level.

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“…The results in Table I 21,22 ). The results for the U d model with a 128-atom supercell show differences to those for the U d,p model, which gives rise to consistent values for all supercell sizes (indicating that in this case the defect states are more localized).…”

Section: Resultsmentioning

confidence: 99%

Vacancy complexes induce long-range ferromagnetism in GaN

Zhang¹,

Schwingenschlögl²,

Roqan³

2014

Journal of Applied Physics

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By means of density functional theory, we argue that ferromagnetism in GaN can be induced by vacancy complexes. Spin polarization originates from the charge compensation between neutral N and Ga vacancies. Defect formation energy calculations predict that a vacancy complex of two positively charged N vacancies and one doubly negative Ga vacancy is likely to form. This defect complex induces a net moment of 1 μB, which is localized around the negative Ga center and exhibits pronounced in-plane ferromagnetic coupling. In contrast to simple Ga vacancy induced ferromagnetism, the proposed picture is in line with the fact that N vacancies have a low formation energy. Formation energies indicate mutual stabilization of the intrinsic defects in GaN.

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Magnetism of solids resulting from spin polarization of p orbitals

Cited by 168 publications

References 127 publications

d° Ferromagnetism of Magnesium Oxide

d° Ferromagnetism of Magnesium Oxide

Intrinsic magnetism at silicon surfaces

Vacancy complexes induce long-range ferromagnetism in GaN

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