2015
DOI: 10.1088/1674-1056/24/2/027505
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Magnetization reversal process in Fe/Si (001) single-crystalline film investigated by planar Hall effect

Abstract: A planar Hall effect (PHE) is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si (001) substrate. Owing to the domain structure of iron film and the characteristics of PHE, the magnetization switches sharply in an angular range of the external field for two steps of 90° domain wall displacement and one step of 180° domain wall displacement near the easy axis, respectively. However, the magnetization reversal process near the hard axis is completed by only… Show more

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Cited by 3 publications
(3 citation statements)
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“…[14] Due to the importance of Fe/Si films in magnetoelectronics and the integration of magnetic devices in silicon technology, [16] the magnetic anisotropy of Fe/Si film has been largely reported. [3,[7][8][9][10][17][18][19][20] In particular, the manipulation of spin-reorientation transition (SRT) processes from out-ofplane to in-plane in Fe/Si film has already been fully understood and studied. For example, for Fe films deposited on flat Si (111) substrate, due to the competition between surface magnetic anisotropy and shape anisotropy, an SRT process from out-of-plane to in-plane with a critical thickness of about 7 monolayer (ML) was observed.…”
Section: Introductionmentioning
confidence: 99%
“…[14] Due to the importance of Fe/Si films in magnetoelectronics and the integration of magnetic devices in silicon technology, [16] the magnetic anisotropy of Fe/Si film has been largely reported. [3,[7][8][9][10][17][18][19][20] In particular, the manipulation of spin-reorientation transition (SRT) processes from out-ofplane to in-plane in Fe/Si film has already been fully understood and studied. For example, for Fe films deposited on flat Si (111) substrate, due to the competition between surface magnetic anisotropy and shape anisotropy, an SRT process from out-of-plane to in-plane with a critical thickness of about 7 monolayer (ML) was observed.…”
Section: Introductionmentioning
confidence: 99%
“…[19,20] The principles behind THS are based on the Hall-effect, which describes the charge separation in a conductor moving in a magnetic field. [21][22][23][24] The spatial resolution of THS is determined by the size of the ultrasonic spot; therefore, it has the same spatial resolution as the TUS. At the same time, the ultrasound stimulation has a good penetration depth and the magnetic field strength is not the largest in the surface and monotonically decreases over the stimulation distance.…”
Section: Introductionmentioning
confidence: 99%
“…Tiehong Wang etc [9] analye the test datas of pore water pressure in the gravel filling foundation with 10000 KN•m, get the appropriate interval time of the first and the second ramming is 4 d, the appropriate interval time of the second and the third ramming is 7 d , Shuaijun Zhao etc [10]test the strengthening effect of gravel filling foundation after the ramming energy of 10000 KN•m by mean of rayleigh wave testing,get the results that 0 to 1 meter depth's velocity decreases , but the 1-8 meters depth's wave velocity increasesGuanbao Ye etc [11] test the reinforcement effect of different mixture filling foundation with 4000 KN•m by single-hole wave velocity testing,conclue that the reinforcement effect of the argillaceous siltstone and tuff stone's volume ratio of 1:1 is better than the volume ratio of 1:2. Changming Hu etc [12] carry out the field test of collapsible loess foundation, analyze the average of ramming settlement and the soil's physical properties, get the best ramming times, stop criteria and effective reinforcement depths of the ramming energy of 2000,3000,6000 KN•m.…”
Section: Introductionmentioning
confidence: 99%