Magneto-electric response of iron garnet film micromagnetic structure on combined action of AC and DC electric field

Functional Ferroic Domain Walls for Nanoelectronics

“…These localized multiferroic states are induced by an inhomogeneous magnetization pattern breaking the inversion symmetry (similar to the polarization in spin-driven ferroelectrics) [158] and exhibit a giant magnetoelectric effect. Such domain walls can be moved and transformed under electric field gradients [149,150,151,152,153,154,155,156,157,158,159,160] as well as exhibit electric modulations under AC magnetic fields [161]. Figure 3c shows a biased tip electrode close to a ferromagnetic domain wall in an iron garnet film.…”

Influence of the magnetic field on the nucleation and properties of 0-degree domain walls in uniaxial films with inhomogeneous magnetoelectric interaction

“…Moreover, in some cases, they can be closely related [8] or the first mechanism can be reduced (transformed) to the second [9]. It should be noted that experiments to detect the FME effect in ferrite-garnet films independently of [4] have been performed more in previous works [10,11], and in [12] (it studied local electric fields generated in DW in ferrite-garnet films) based on the technique of fluorescence spectroscopy of single molecules, and the nature of the observed effect was confirmed by FME. In addition, the study of the influence of the Zeeman interaction on the degree of manifestation of the FME effect in ferrite-garnet films showed [7,13] that if the external magnetic field is directed perpendicular to the plane of rotation of the magnetic moments 180 • DW, then by changing the magnitude and direction of the field, it is possible to adjust the magnitude of the effect (more precisely, the value of the integral polarization [7,13,14]) and even 'switch' the nature of the interaction from attraction to repulsion.…”