Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2

Hayne, Manus; Maes, Jochen; Manz, Yvonne; Schmidt, Oliver G.; Moshchalkov, Victor

doi:10.1016/j.physe.2003.11.029

Cited by 2 publications

(1 citation statement)

References 13 publications

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“…This analysis has been successfully applied to high‐field PL data for a large number of semiconductor systems such as: InP QDs in GaInP 2 ; InAs QDs in GaAs ; InAs quantum wires in InP ; GaSb QDs in GaAs ; InAs QDs in InP ; GaAs QDs in AlGaAs ; weakly‐ordered GaInP 2 ; InP QDs in GaAs ; Si nanocrystals in SiO 2 ; and Ga 1‐ x In x As y N 1‐ y quantum wells . Even though there are two regimes, a set of PL energies as a function of magnetic field can be fit in a single process using the equivalent expression expressed by equation :

E = a_{1} + a_{2} B^{2} for B ⩽ B_{C}

and

E = a_{1} - a_{2} B_{C}^{2} + 2 a_{2} B_{C} B f o r B \geq B_{C}

yielding three parameters: a 1 = E 0 , B C, and

a_{2} = e^{2} a_{B}^{2} / 8 μ

(diamagnetic shift coefficient).…”

Section: Quantum Dot Excitons In Magnetic Fields: Analytical Modelsmentioning

confidence: 99%

High‐field magneto‐photoluminescence of semiconductor nanostructures

Hayne

Bansal

2012

Luminescence

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We review the photoluminescence of semiconductor nanostructures in high magnetic fields, concentrating on the effects of the applied magnetic field on orbital motion (wave function extent), which is probed in experiments on large ensembles. We present an overview of the physics of excitons in high magnetic fields in 3- and 2-D before introducing the zero-dimensional case. We then discuss the physics of quantum-dot excitons in high magnetic fields with particular attention to the approximate analytical models used to interpret experimental results. This is followed by a brief description of a typical high-field magneto-photoluminescence setup. We then present four examples of magneto-photoluminescence experiments on different materials systems chosen from our own research to illustrate how high magnetic fields can be used to reveal new insights into the physics of semiconductor nanostructures.

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E = a_{1} + a_{2} B^{2} for B ⩽ B_{C}

and

E = a_{1} - a_{2} B_{C}^{2} + 2 a_{2} B_{C} B f o r B \geq B_{C}

yielding three parameters: a 1 = E 0 , B C, and

a_{2} = e^{2} a_{B}^{2} / 8 μ

(diamagnetic shift coefficient).…”

Section: Quantum Dot Excitons In Magnetic Fields: Analytical Modelsmentioning

confidence: 99%

High‐field magneto‐photoluminescence of semiconductor nanostructures

Hayne

Bansal

2012

Luminescence

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Influence of GaInP ordering on the performance of GaInP solar cells

et al. 2016

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CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room temperature and low-temperature photoluminescence (PL) spectra of AlGaInP/GaInP/AlGaInP double heterostructures (DHs) reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance.

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Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2

Cited by 2 publications

References 13 publications

High‐field magneto‐photoluminescence of semiconductor nanostructures

High‐field magneto‐photoluminescence of semiconductor nanostructures

Influence of GaInP ordering on the performance of GaInP solar cells

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