Magnetoelectricity at room temperature in the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Bi</mml:mi></mml:mrow><mml:mrow><mml:mn>0.9</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Tb</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">La</mml:mi>

Palkar, V. R.; Kundaliya, Darshan C.; Malik, S.K.; Bhattacharya, Sarbari

doi:10.1103/physrevb.69.212102

Cited by 388 publications

(154 citation statements)

References 6 publications

Supporting

Mentioning

138

Contrasting

Unclassified

Order By: Relevance

“…A dielectric anomaly has been observed in BLF thin films at the three frequencies ͑f = 0.1, 0.5, and 1.0 MHz͒. This type of dielectric anomaly in simultaneous ferroelectrically and ferromagnetically ordered systems was predicted by the LandauDevonshire theory of phase transition as an influence of varying magnetic order on the electric order 25 26 We can also see that the anomalous temperature decreases with increasing frequency. In addition, such an anomaly of this kind was not found in BFO thin films for the reason that for BFO the anomalous temperature was reported above 300°C, 27 at which the dielectric loss was high for our films.…”

Section: Resultsmentioning

confidence: 50%

Preparation of La-doped BiFeO3 thin films with Fe2+ ions on Si substrates

Gao

Cai

Wang

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

La-doped BiFeO 3 thin films with Fe 2+ ions have been prepared on Pt/ TiO 2 / SiO 2 / Si substrates by pulsed laser deposition in order to enhance the ferroelectric and magnetic properties. The targets for the film deposition were synthesized using a rapid liquid phase sintering technique to ensure the low leakage. The dielectric properties at room temperature and above were investigated. It was observed that the La doping greatly enhances the ferroelectric polarization at room temperature by modifying the film structure from rhombohedral to monoclinic. The saturation magnetization was enhanced about two times due to the Fe 2+ ions in the thin films.

show abstract

Section: Resultsmentioning

confidence: 50%

Preparation of La-doped BiFeO3 thin films with Fe2+ ions on Si substrates

Gao

Cai

Wang

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The presence of ME coupling is evident from the dielectric measurements as follows: 38,39 (a) an anomaly around T N in the dielectric permittivity; and (b) a change in dielectric permittivity by the application of magnetic field. The presence of dielectric anomaly around the T N in the temperature dependent dielectric permittivity (Fig.…”

Section: E Magnetoelectric Couplingmentioning

confidence: 99%

Phase transition and enhanced magneto-dielectric response in BiFeO3-DyMnO3 multiferroics

Tripathy

Pradhan

Mishra

et al. 2015

Journal of Applied Physics

View full text Add to dashboard Cite

Impedance and AC conductivity study of nano crystalline, fine grained multiferroic bismuth ferrite (BiFeO3), synthesized by microwave sintering AIP Advances 5, 097164 (2015) We report systematic studies on crystal structure and magneto-dielectric properties of (1 À x) BiFeO 3 -x DyMnO 3 (0.0 x 0.2) nanoceramics synthesized by auto-combustion method. Rietveld refinement of X-ray diffraction data indicates a structural transition from R3c to R3c þ Pn2 1 a at x ¼ 0.1. Field emission scanning electron micrographs display a decrease in grain size with increase in x. The presence of dielectric anomalies around antiferromagnetic transition temperature implies the magnetoelectric coupling. Dielectric measurements showed decrease in magnetic ordering temperature with increasing x in agreement with differential scanning calorimetry results. A significant increase in magnetization has been found with increasing DyMnO 3 substitution. Magnetoimpedance spectroscopy reveals a significant change ($18%) in dielectric permittivity at H ¼ 2 T for x ¼ 0.2. V C 2015 AIP Publishing LLC. [http://dx

show abstract

“…Enhancements in magnetization and ferroelectric polarization were reported in the A-site doped system of Bi 0.9-x Tb x La 0.1 FeO 3 where Tb and La are isovalent to Bi 3+ ions 15 , and also in Bi 1-x Nd x FeO 3 . 16 Interestingly, divalent cation (A) substituted Bi 0.7 A 0.3 FeO 3 (A = Ca, Sr, Pb, and Ba) also exhibits enhanced magnetization 17 and the recent observation of magnetic-field induced ferroelectric hysteresis loop in Bi 0.75 Sr 0.25 FeO 3-δ makes it more attractive for practical applications.…”

Section: Introductionmentioning

confidence: 99%

Magnetic and magnetoelectric studies in pure and cation doped

Naik

Mahendiran

2009

Solid State Communications

124

View full text Add to dashboard Cite

We report the effect of divalent cation (A) substitution on magnetic and magnetoelectric properties in Bi 1-x A x FeO 3 (A= Sr, Ba and Sr 0.5 Ba 0.5 ; x = 0 and 0.3). The rapid increase of magnetization below 100 K and a peak at the Neel temperature T N = 642±2 K found in BiFeO 3 is suppressed in the co-doped sample (A = Sr 0.15 Ba 0.15 ). All the divalent cation doped samples show enhanced magnetization with a well defined hysteresis loop compared to the parent compound. Both longitudinal (L-α ME ) and transverse (T-α ME ) magnetoelectric coefficients with dc magnetic field parallel and perpendicular to the direction of induced voltage, respectively, were measured using dynamic lock-in technique. It is found that the T-α ME increases in magnitude and exceeds the L-α ME with increasing size of the A cation. The maximum T-α ME = 2.1 mV/cmOe in the series is found for A = Sr 0.15 Ba 0.15 , though it is not the compound with the highest saturation magnetization. The observed changes in the magnetoelectric coefficient are suggested to possible modification in the domain structure and magnetoelectric coupling in these compounds.1

show abstract

Magnetoelectricity at room temperature in theBi0.9−xTbxLa

Cited by 388 publications

References 6 publications

Preparation of La-doped BiFeO3 thin films with Fe2+ ions on Si substrates

Preparation of La-doped BiFeO3 thin films with Fe2+ ions on Si substrates

Phase transition and enhanced magneto-dielectric response in BiFeO3-DyMnO3 multiferroics

Magnetic and magnetoelectric studies in pure and cation doped

Contact Info

Product

Resources

About