2007
DOI: 10.1103/physrevb.76.235202
|View full text |Cite
|
Sign up to set email alerts
|

Magnetoresistance in organic light-emitting diode structures under illumination

Abstract: We have investigated the effect of illumination on the organic magnetoresistance ͑OMR͒ in organic lightemitting diode ͑OLED͒ structures. The results show that it is possible to obtain OMR at voltages below "turn-on," where no OMR was visible for devices operated in the dark. The photoinduced OMR has a field dependence that is identical to that obtained for OLEDs containing very thin layers, where triplet dissociation at the cathode was a major component of the OMR. At voltages around the open circuit voltage, … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

5
129
0
5

Year Published

2009
2009
2022
2022

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 151 publications
(139 citation statements)
references
References 16 publications
5
129
0
5
Order By: Relevance
“…Moreover, various OMAR-related phenomena are claimed to be observed in literature, like spin mixing by a difference in g factors of electrons and holes 7,8 or high-field effects caused by triplet excitons. [9][10][11] Also in those cases, we feel that a more explicit quantum-mechanical treatment would be benificial.…”
Section: Introductionmentioning
confidence: 98%
“…Moreover, various OMAR-related phenomena are claimed to be observed in literature, like spin mixing by a difference in g factors of electrons and holes 7,8 or high-field effects caused by triplet excitons. [9][10][11] Also in those cases, we feel that a more explicit quantum-mechanical treatment would be benificial.…”
Section: Introductionmentioning
confidence: 98%
“…The largest magnetoresistance occurs when k hop is much smaller than ω hf , and this "slow-hopping" case is the case we consider from now on. The observation of large magnetic field effects in organic semiconductors [1][2][3][4][5][6][7][8][9][10] indicates that the hopping rate can indeed be smaller than or at least comparable to the hyperfine precession frequency. Because coherent effects between eigenstates of the spin Hamiltonian vanish in the limit of slow hopping, we only need to consider the occupancy of the (localized) spin eigenstates and hopping between these states.…”
Section: Modelmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8][9][10] The precise mechanisms behind these effects are still debated, but agreement is arising that the effects are caused by the magnetic-field sensitivity of spin-selective reactions between spin-carrying electronic excitations (electrons, holes, triplet excitons). Striking analogies exist with mechanisms known in the field of spin chemistry.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…For CT-mediated processes, MFEs require that the observed physical property depends either directly or indirectly on the spin state of the electron-hole pair. For instance, spin selection rules for radiative electron-hole recombination can give rise to a magnetic field-dependent electroluminescence yield [20,[24][25][26]. To understand specifically how CT state properties are influenced by the presence of a magnetic field it is natural to describe the spin state of the electron-hole pair in a standard basis of singlet and triplet states.…”
mentioning
confidence: 99%