Magnetoresistive Random Access Memory

Apalkov, Dmytro; Diény, B.; Slaughter, J. M.

doi:10.1109/jproc.2016.2590142

Cited by 470 publications

(292 citation statements)

References 120 publications

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“…Electrical switching of magnetization has applications in SOT-magnetic random access memory and other emerging memory technologies. Materials with perpendicular magnetic anisotropy (PMA) are desirable for such devices because they allow for higher bit densities [6,7]. There has been extensive work on SOT switching of PMA ferromagnetic metals such as Co and CoFeB [8][9][10][11], but FMIs have two advantages over metals: a more favorable scaling behavior, because the PMA originates from bulk rather than interface anisotropy; and prevention of current shunting from the SOT-producing HM layer [4].…”

Section: Introductionmentioning

confidence: 99%

Magnetism and spin transport in rare-earth-rich epitaxial terbium and europium iron garnet films

Rosenberg

Beran

Avci

et al. 2018

Phys. Rev. Materials

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Section: Introductionmentioning

confidence: 99%

Magnetism and spin transport in rare-earth-rich epitaxial terbium and europium iron garnet films

Rosenberg

Beran

Avci

et al. 2018

Phys. Rev. Materials

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“…In high-density MRAMs, synthetic antiferromagnets (SAFs) are widely adopted in MTJs as the reference layer [28][29][30] and even as the free layer [31,32] to improve the thermal stability of MTJs and reduce the coupling field between the reference and free layers. A SAF with strong interlayer coupling can generally be regarded as a FM layer with the effective magnetization of M eff = M A + M B , where M A and M B are the magnetization of two coupled FMs (see Supplemental Material [33]).…”

Section: Introductionmentioning

confidence: 99%

Anomalous spin-orbit torque switching in synthetic antiferromagnets

Almasi

Price

et al. 2017

Phys. Rev. B

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We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We show that both the positive and negative spin Hall angle (SHA)-like switching can be observed in Pt/SAF structures with only positive SHA, depending on the strength of applied in-plane fields. A switching mechanism directly arising from the asymmetric domain expansion is proposed to explain the anomalous switching behaviors. Contrary to the macrospin-based switching model where the SOT switching direction is determined by the sign of SHA, this switching mechanism suggests that the SOT switching direction is dominated by the field-modulated domain wall motion and can be reversed even with the same sign of SHA. The presence of this switching mechanism is further confirmed by the domain wall motion measurements. The anomalous switching behaviors provide important insights for understanding SOT switching mechanisms and also offer novel features for applications.

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“…[1][2][3][4] For stable read/write operations in MgO-based p-MTJs, [5][6][7][8] the magnetization in the reference layer should be robust even under any situations subjected to perturbations such as external magnetic field and thermal fluctuation. Therefore, antiferromagnetically (AF) coupled synthetic reference layer with perpendicular magnetization, simply called as p-SAF structure, has been widely used as the reference layer.…”

Section: Introductionmentioning

confidence: 99%

Giant magnetoresistance in perpendicularly magnetized synthetic antiferromagnetic coupling with Ir spacer

et al. 2018

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Perpendicularly magnetized magnetic tunnel junction (p-MTJ) is a key element for developing high-density spin-transfer torque switching magnetoresistive random access memory. Recently, a large exchange coupling (IEC) in the synthetic antiferromagnetic reference layer with Ir interlayer was observed in p-MTJs. The evaluation of the IEC is, however, difficult due to the electrostatic breakdown of MTJs. This study demonstrates the evaluation of the IEC with Ir interlayer in giant magnetoresistive (GMR) nanopillar. We fabricated three kinds of perpendicularly magnetized GMR elements; bottom-free structures with Cu or Ir spacer, and top-free structure with Ir spacer. The magnetoresistance (RH) loops of all samples show sharp changes of the magnetoresistance at the magnetic fields over ±10 kOe, indicating the existence of the large IECs. In particular, a sharp change of the magnetoresistance at the field over ±20 kOe was found for the element with Cu of 2 nm thickness.

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Magnetoresistive Random Access Memory

Cited by 470 publications

References 120 publications

Magnetism and spin transport in rare-earth-rich epitaxial terbium and europium iron garnet films

Magnetism and spin transport in rare-earth-rich epitaxial terbium and europium iron garnet films

Anomalous spin-orbit torque switching in synthetic antiferromagnets

Giant magnetoresistance in perpendicularly magnetized synthetic antiferromagnetic coupling with Ir spacer

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