Magnetospectroscopy of Be in GaAs

Abstract

Far-infrared absorption measurements have been made of the Lyman series of the acceptor Be in GaAs up to magnetic fields of 30 T, supplemented by photothermal ionization spectroscopy measurements to 6 T. The results confirm and greatly extend previous work and reveal several phenomena. The strongest component of the G line moves to higher energies and increases in intensity with field. Around 20 T the field dependence of the transition displays a marked kink. At higher fields the dependence of energy on field is linear. This behavior is attributed to unresolved components that change in relative intensity with field and leads to a reappraisal of the identity of the low-field transition. The D line is followed to high fields allowing an accurate determination of the splitting of the field-induced components of the second excited state. Photothermal ionization spectra for the C line permit the determination of the splitting of the field-induced components of the ground state and of the third excited state. At high magnetic field an absorption appears which increases in energy with field at a much greater rate than any of the lines mentioned above. It is thought to originate in the valence-band Landau levels.

Infrared Spectroscopy of GaAs Doped with Mn

“…Only one of the samples shows a fine structure related to Lyman transitions of [Mn The three lines due to the transitions between ground 1S 3/2 and excited 2P states with different total momentum J, originating from different valence subbands (namely Γ 8 and Γ 7 ) are clearly seen. It is found that relative intensities of the lines are in agreement with those of the corresponding lines observed for shallow acceptors of GaAs [7,8].…”

“…3 we plotted rescaled data for a typical shallow acceptor in GaAs, like carbon after Ref. [7] together with the results for [Mn 2+ (d 5 ) + a hole] center. As it is seen, the above--mentioned interaction amplifies the effect of the magnetic field.…”

Compositional evolution of Bi-induced acceptor states in GaAs1−xBixalloy

“…16,17 The energy differences between C and D lines (16.7 ± 1.5 cm −1 ), and G and D lines (31.8 ± 1.5 cm −1 ) are in good agreement with those theoretically predicted and experimentally observed for shallow acceptors in GaAs. 14,16,[18][19][20] The E b absorption peak at 203 ± 1 cm −1 (25.2 ± 0.2 meV) is attributed to a hole transition from the ground state to the continuum (top of the valence band) in the Lyman series and directly gives the acceptor binding energy. Since none of the binding energy values , 16 the observed absorption spectra ought to involve some different Bi-related acceptor state ∼25 meV above the valence band maximum.…”

Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide

“…Schmitt et al, 11 in a theoretical study, propose a rule of thumb that the linear terms are adequate in describing the states to about B 0 * /5, or about 12 T in InP. However, it has been demonstrated in experiments in p-GaAs that the splittings of the magnetotransitions often follow a linear dependence to much higher fields and an explanation of that phenomenon given: 33 often the quadratic term is the same for the two excited states and so is eliminated if the difference is calculated. This allows accurate calculation of g factors using the linear approximation.…”