2009
DOI: 10.1063/1.3064895
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Magnetotransport in two-dimensional n-InGaAs∕GaAs double-quantum-well structures near the transition from the insulator to the quantum Hall effect regime

Abstract: The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement J. Appl. Phys. 113, 033704 (2013); 10.1063/1.4776236Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dotsThe temperature and magnetic-field dependence of the components of the conductivity and resistivity tensors are calculated with the quantum corrections due to the weak localization effect and electron-electron interaction taken into ac… Show more

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Cited by 15 publications
(11 citation statements)
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“…The correction to the conductivity due to e-e interaction 14 is investigated in DQW structures significantly less, 12,15 although it is of paramount importance in complicated systems. For instance, the effect of interaction on the conductivity has recently attracted a great deal of interest in a context of twodimensional (2D) systems with strong e-e interaction showing a metallic-type behavior of the conductivity, dσ/dT < 0.…”
Section: Introductionmentioning
confidence: 99%
“…The correction to the conductivity due to e-e interaction 14 is investigated in DQW structures significantly less, 12,15 although it is of paramount importance in complicated systems. For instance, the effect of interaction on the conductivity has recently attracted a great deal of interest in a context of twodimensional (2D) systems with strong e-e interaction showing a metallic-type behavior of the conductivity, dσ/dT < 0.…”
Section: Introductionmentioning
confidence: 99%
“…q2 . Based on the analysis of DQW in transverse magnetic field at temperatures below 8 K, Hall effect in weak (R H (B,T)) and strong magnetic fields, as well as positive magnetoresistance in transverse magnetic field 17 at T ! 20 K, we determined the concentrations, mobilities and transport relaxation times of charge carriers in the subbands of S and AS states (n S,AS (T), l S,AS (T), s 1 tr ðTÞ, s 2 tr ðTÞ) and the Fermi energies 17).…”
Section: Resultsmentioning
confidence: 99%
“…Several theoretical 9-13 and experimental [15][16][17][18] studies have been devoted to solving this problem for structures with DQW (only Ref. 15 has considered strongly coupled DQW).…”
Section: Theoretical Dependence Of Quantum Lifetime On Temperaturementioning
confidence: 99%
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