2016
DOI: 10.1016/j.electacta.2016.10.093
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Manipulation of defect density and nitrogen doping on few-layer graphene sheets using the plasma methodology for electrochemical applications

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Cited by 16 publications
(7 citation statements)
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“…In addition, direct plasma etching in nitrogen atmosphere is also one of the ways to obtain carbon‐based materials with pyridine nitrogen as the main nitrogen species. Chi [ 49 ] utilized 400–1600 W microwaves to motivate N plasma under the N 2 gas flow of 50 mL min −1 , making it possible for nitrogen atoms to be etched directly onto graphene sheets. The ratio of pyridine nitrogen in this material is as high as 68%.…”
Section: Nitrogen‐doping Experimental Methodsmentioning
confidence: 99%
“…In addition, direct plasma etching in nitrogen atmosphere is also one of the ways to obtain carbon‐based materials with pyridine nitrogen as the main nitrogen species. Chi [ 49 ] utilized 400–1600 W microwaves to motivate N plasma under the N 2 gas flow of 50 mL min −1 , making it possible for nitrogen atoms to be etched directly onto graphene sheets. The ratio of pyridine nitrogen in this material is as high as 68%.…”
Section: Nitrogen‐doping Experimental Methodsmentioning
confidence: 99%
“…Usually the graphitic, pyridinic, and other N content is determined with X-ray photoelectron spectroscopy, and the electrocatalytic effect is investigated depending on the different N content. On the basis of their results, several papers have suggested that the pyridinic N is the main contributor to the ORR activity, while others suspect that the C atom’s neighboring graphitic N’s are the active center for the ORR. According to a third standpoint, both types of N’s have their own role. Lai et al prepared two types of N-doped graphenes by annealing and found that graphitic N’s increase the limiting current density and that pyridinic N’s improve the onset potential.…”
Section: Introductionmentioning
confidence: 99%
“…Ex situ plasma-assisted functionalisation and heteroatom doping of graphene provides the opportunity to modify and improve the properties of a wider variety of graphene materials which can been synthesised through the standard procedures, for example, micromechanical exfoliation, CVD, solution-based exfoliation, or chemical processing. Ex situ N-doping of graphene has been demonstrated by exposing micromechanically exfoliated graphene, highly oriented pyrolytic graphite, CVD graphene, and epitaxial graphene on SiC to various strengths of NH 3 [123][124][125], N 2 /H 2 [126][127][128], N 2 [129][130][131] and N 2 /O 3 [132] plasmas under low pressure conditions. Depending on the intensity and duration of processing conditions, the plasma modifications can be varied from mild N incorporation with pyridinic, pyrrolic and graphitic nitrogen and a preference for edge-functionalisation [124], to defect generation, and even significant etching which can subsequently yield N-doped graphene quantum nanosheets (figure 10(a)) [127].…”
Section: Graphenementioning
confidence: 99%