Manufacturability Analysis of a Micro-Electro-Mechanical Systems–Based Electron-Optical System Design for Direct-Write Lithography

A program based on the SOR method have been setup for calculating the electrostatic potential inside the electron optical system (EOS). This method can deal with large domain calculation more efficiently than by using the finite difference or finite element methods. Since the MEBDW system is composed of an array of EOSs, periodic boundary conditions in the x and y directions are applied. A case of EOS is demonstrated in this paper.

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“…The lens diameter is D lens =400 µm in our design. All those parameters are the same as the previous report [10].…”

Section: Design Of An Eosmentioning

confidence: 99%

The Electrostatic Potential inside the Electron-Optical Systen with Periodic Boundary-Value Conditions

Pei

Tsai

2014

AMR

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“…The Massively Parallel MaskLess Lithography System (MPML2) 11,13 targets for cost-effective manufacturing at the 06FD04-2 Chen et al: Lithography-patterning-fidelity-aware electron-optical system 06FD04-2 22 nm half-pitch node and beyond. The MPML2 system is a full-wafer-beam design, and the beam pitch is initially set to 1 mm.…”

Section: Eos Architecture Design and Preliminary Parameter Consimentioning

confidence: 99%

“…11,16,17 A simplified EOS design is proposed as an example to verify the proposed design flow. 11,16,17 A simplified EOS design is proposed as an example to verify the proposed design flow.…”

Section: Eos Architecture Design and Preliminary Parameter Consimentioning

confidence: 99%

Lithography-patterning-fidelity-aware electron-optical system design optimization

Chen¹,

Ng²,

Ma³

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Low-energy electron beam lithography is a promising patterning solution for the 21 nm half-pitch node and beyond due to its high resolution, low substrate damage, and increased resist sensitivities. To ensure a successful electron-optical system (EOS) design, many factors such as focusing properties (FPs) and patterning fidelity (PF) have to be considered. In traditional EOS optimization flow, FPs are typical performance indices selected when optimizing the EOS design parameters. In each numerical iteration, the EOS FP simulation results are compared with specified performance index values. The differences are reduced by adjusting the EOS design parameters until convergence. However, the performance indices related to FPs may have no direct relation to lithography PF, which is judged by the quality of the developed resist patterns. A new EOS design methodology which directly incorporates lithography PF metrics into the optimization flow is proposed. The EOS design parameters are first optimized while meeting the geometric constraints by using the traditional design flow to obtain acceptable FPs. In order to ensure lithography PF, writing patterns are selected and writing parameters are optimized. Then, constraints and cost functions related to PF are selected to further optimize the EOS design parameters to obtain acceptable PF. In each numerical iteration, the simulated lithography patterning results are compared against specified PF metric values. Their differences are reduced by adjusting the EOS design parameters until all constraints are met and PF cost functions are converged. The proposed method is applied to an EOS structure design for a 5 keV electron beam lithography system which includes a single-gate source and a focusing lens. Initial values of EOS design parameters and geometric constraints are selected based on previous studies. A drawn layout for a 22 nm isolated line pattern is used for verifying the lithography PF specifications based on the International Technology Roadmap of Semiconductors. The developed resist pattern after applying the proposed method clearly indicates that the PF is significantly improved from the value of corresponding critical dimension (CD) and the value of gate CD control.

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“…14) Actually, when fabricating electron-beam direct-write lithography chambers, asymmetric matching of individual electrode pieces and misalignments between assembled elements may occur because of fabrication limits. The investigation of fabrication error budgets that affect electron trajectories was carried out by Chen et al 21) In their research, the software LORENTS 2D/RS 9) is employed and the analyses are based on 2D electrostatic fields. An accurate 3D field computation for electron-beam direct-write lithography chambers is a multiscale problem that requires a huge computer memory to achieve sufficient resolution.…”

Section: Introductionmentioning

confidence: 99%

Solution-Refined Method for Electrostatic Potential Distribution of Large-Scale Electron Optics

Lee

Sheu

et al. 2013

Jpn. J. Appl. Phys.

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Starting from the microscopic Smoluchowski equation for interacting Brownian particles under stationary shearing, exact expressions for shear-dependent steady-state averages, correlation and structure functions, and susceptibilities are obtained, which take the form of generalized Green-Kubo relations. They require integration of transient dynamics. Equations of motion with memory effects for transient density fluctuation functions are derived from the same microscopic starting point. We argue that the derived formal expressions provide useful starting points for approximations in order to describe the stationary non-equilibrium state of steadily sheared dense colloidal dispersions.

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Manufacturability Analysis of a Micro-Electro-Mechanical Systems–Based Electron-Optical System Design for Direct-Write Lithography

Cited by 7 publications

References 46 publications

The Electrostatic Potential inside the Electron-Optical Systen with Periodic Boundary-Value Conditions

The Electrostatic Potential inside the Electron-Optical Systen with Periodic Boundary-Value Conditions

Lithography-patterning-fidelity-aware electron-optical system design optimization

Solution-Refined Method for Electrostatic Potential Distribution of Large-Scale Electron Optics

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