Mapping of Si/SiC p–n heterojunctions using scanning internal photoemission microscopy

Abstract

We demonstrated the two-dimensional characterization of p +-Si/n %-SiC heterointerfaces by scanning internal photoemission microscopy (SIPM). In internal photoemission spectra, a linear relationship was found between the square root of photoyield (Y) and photon energy, and the threshold energy (qV th) was reasonably obtained to be 1.34 eV. From the SIPM results, Y and qV th maps were successfully obtained, and nanometer-deep gaps in the junction were sensitively visualized as a pattern. These results suggest that this method is a powerful tool for investigating the inhomogeneity of heterojunctions as well as their carrier transport properties.

Recent Advances in Encapsulation of Flexible Bioelectronic Implants: Materials, Technologies, and Characterization Methods

“…The differential pressure (manometric) method is based on a direct pressure measurement induced by the water diffusion through the barrier film: a vacuum vessel is divided into two chambers by the barrier foil. [ 323,324 ] One chamber (feed chamber) is filled with the tested gas (water vapor), the other (detection chamber) is under vacuum, so with the passing of time, the empty chamber is progressively filled with permeated water vapor which increases the absolute pressure (Figure 7B). By measuring the pressure, it is possible to determine the permeation rate through the barrier.…”

Observations of inhomogeneity of 3C-SiC layers grown on 6H-SiC substrates by using scanning internal photoemission microscopy

“…15,16) Thus far, we have demonstrated the mapping of characteristics in interfacial reactions and surface damage in Si, GaAs, GaN, IGZO, and SiC Schottky contacts and heterointerfaces. [17][18][19][20][21][22][23][24][25] We also demonstrated the characterization of Ni contacts formed on 3C-p-SiC epitaxial layers grown on 4H-SiC. 26) The sample surface consists of 3C-SiC domains with a flat top aligned along the [1 100] direction, which is the same as the off-angle direction of the 4H-SiC substrate.…”

Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy

“…13,14) We have demonstrated the mapping of characteristics for interfacial reactions; degradation under applied voltage stress; and surface damage for Schottky contacts on Si, 13) GaAs, [14][15][16] GaN, [17][18][19][20][21] indiumgallium-zinc oxide, 22) and SiC. 17,[23][24][25] The advantage of this method is that local variation in the electrical characteristics can be clearly visualized.…”