Mask writing time explosion and its effect on CD control in e-beam lithography

Lee, Sangeun; Choi, Jin; Min, Seong Jun; Kim, Hee Bom; Kim, Byung Gook; Woo, Sang-Gyun; Cho, Han-Ku

doi:10.1117/12.868264

Cited by 12 publications

(6 citation statements)

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“…It is made by the discrepancy between the calculated dose with design pattern and exposed by e-beam writer. Depending on dose margin, the error of real dose makes CD error [7].…”

Section: And Image Placement Error In Vsb Mask Writermentioning

confidence: 99%

The requirements for the future e-beam mask writer: statistical analysis of pattern accuracy

et al. 2011

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As semiconductor features shrink in size and pitch, the extreme control of CD uniformity, MTT and image placement is needed for mask fabrication with e-beam lithography. Among the many sources of CD and image placement error, the error resulting from e-beam mask writer becomes more important than before. CD and positioning error by e-beam mask writer is mainly related to the imperfection of e-beam deflection accuracy in optic system and the charging and contamination of column. To avoid these errors, the e-beam mask writer should be designed taking into account for these effects. However, the writing speed is considered for machine design with the highest priority, because the e-beam shot count is increased rapidly due to design shrink and aggressive OPC. The increment of shot count can make the pattern shift problem due to statistical issue resulting from e-beam deflection error and the total shot count in layout. And it affects the quality of CD and image placement too.In this report, the statistical approach on CD and image placement error caused by e-beam shot position error is presented. It is estimated for various writing conditions including the intrinsic e-beam positioning error of VSB writer. From the simulation study, the required e-beam shot position accuracy to avoid pattern shift problem in 22nm node and beyond is estimated taking into account for total shot count. And the required local CD uniformity is calculated for various e-beam writing conditions. The image placement error is also simulated for various conditions including e-beam writing field position error. Consequently, the requirements for the future e-beam mask writer and the writing conditions are discussed. And in terms of e-beam shot noise, LER caused by exposure dose and shot position error is studied for future e-beam mask writing for 22nm node and beyond.

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“…It is made by the discrepancy between the calculated dose with design pattern and exposed by e-beam writer. Depending on dose margin, the error of real dose makes CD error [7].…”

Section: And Image Placement Error In Vsb Mask Writermentioning

confidence: 99%

The requirements for the future e-beam mask writer: statistical analysis of pattern accuracy

et al. 2011

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“…In 2013, IMS nanofabrication installed the MBMW Alpha tool-the first e-beam MBMWthat aimed to overcome the limitations of the then-prevalent variable shaped beam (VSB) writers. 2 The VSB technology was struggling to keep pace as write times were projected to grow exponentially mainly due to two reasons: higher dose requirements of new resists and the increasing complexity of mask pattern due to the extensive use of optical proximity correction. The utilization of curvilinear features for inverse lithography technology (ILT) seemed unreachable with VSB technology.…”

Section: Introductionmentioning

confidence: 99%

Multi-beam mask writing opens up new fields of application, including curvilinear mask pattern for high numerical aperture extreme ultraviolet lithography

Tomandl,

Spengler,

Hudek

et al. 2024

J. Micro/Nanopattern. Mats. Metro.

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Multi-beam mask writers (MBMWs) from IMS Nanofabrication disrupted the mask writing technology in the past decade by offering this technology to the industry with a range of benefits over the preceding variable shaped beam technology. The MBMW-101 enabled write times independent of the pattern complexity, usage of low sensitivity resists at high throughput, and superior resolution and critical dimension uniformity (CDU) capabilities. With these benefits, the technology enabled high volume extreme ultraviolet (EUV) mask manufacturing and the use of inverse lithography technology (ILT) using curvilinear patterns for logic and memory applications to the industry. The MBMW-201 is today's standard technology for leading edge photo mask patterning and is used in the most advanced mask shops around the globe. Its superior robustness and powerful write modes allow for unprecedented writing efficiency and resolution capability. Now IMS has broadened the spectrum of applications for this technology and released two new products. The MBMW-100 Flex is a versatile mask writer to open multi-beam benefits to mature and intermediate node applications at high throughput and beneficial total cost of ownership, targeting nodes from 32 nm to 10 nm. The MBMW-301 is the third generation leading edge mask writer for ultra-low sensitivity resists with resolution and CDU capabilities meeting EUV high numerical aperture requirements targeting nodes down to 2 nm and beyond. This article will delve into the transformational journey of multi-beam mask writing, from its early beginnings to its current status as the cornerstone of EUV mask production, and provide an overview of the two new models with performance data and lithography results.

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“…In 2013, IMS Nanofabrication installed the MBMW Alpha tool -the first e-beam multi-beam mask writer -that aimed to overcome the limitations of the then prevalent VSB writers [2].…”

Section: Introductionmentioning

confidence: 99%

Multi-beam mask writing opens up new fields of application

Tomandl,

Spengler,

Klein

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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Mask writing time explosion and its effect on CD control in e-beam lithography

Cited by 12 publications

References 0 publications

The requirements for the future e-beam mask writer: statistical analysis of pattern accuracy

The requirements for the future e-beam mask writer: statistical analysis of pattern accuracy

Multi-beam mask writing opens up new fields of application, including curvilinear mask pattern for high numerical aperture extreme ultraviolet lithography

Multi-beam mask writing opens up new fields of application

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