The requirements for the future e-beam mask writer: statistical analysis of pattern accuracy

Lee, Sangeun; Choi, Jin; Kim, Hee Bom; Kim, Byung Gook; Cho, Han-Ku

doi:10.1117/12.896977

Cited by 7 publications

(6 citation statements)

References 8 publications

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“…The previous study published that the CD error results from dose error, e-beam size error and e-beam position error. 6,8 CD of the pattern occurred by shot density is larger than that of the referential patterns because the proximity effect from surrounding shot density affects e-beam size error according to the papers. However, when e-beam writer draws the pattern split by small shots, its CD decreases despite high shot density, as shown in Figure 3 (a) and (b).…”

Section: D Squarementioning

confidence: 96%

“…Furthermore, the lower dose by small shot gives rise to the worse CD uniformity because dose is a very important factor in determining CD uniformity. 6 Local CD uniformity also includes the effect of position error of small shot. But it is hard to separate the effect of e-beam position error from local CD uniformity since stitching error between small shots isn't detected in the result.…”

Section: D Squarementioning

confidence: 99%

“…Each e-beam shot is controlled by using the electromagnetic deflector within the specified writing field. 6 The polygons in VSB e-beam data should be split in many segments because VSB type of e-beam writer utilizes individual e-beam shots for writing pattern. If the number of corner increases by complicated OPC or the target patterns are changed to curvilinear types by ILT, the polygons will be split in more segments.…”

Section: Introductionmentioning

confidence: 99%

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Requirements of the e-beam shot quality for mask patterning of the sub-1X device

Park

Lee

et al. 2016

SPIE Proceedings

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As the integration node becomes smaller in 193nm ArF immersion optical lithography, the complexity of optical proximity correction (OPC) has been increased continuously. Moreover, pattern design should be changed by more aggressive transformation technique such as inverse lithography technique (ILT). The greater fidelity to the target design on wafers is achieved by the application of these OPC techniques and results in the greater complexity level of the mask patterns. Complicated mask pattern consists of many corners and assist features, which raises the fraction of small shots in e-beam data. To get more accurate mask pattern, the dose stability of small shots becomes more important in a complicated mask pattern.In this paper, we present the evaluation results of the small shot handling capabilities of e-beam machines. According to the results, the information of small shots generated during data fracturing should be considered as a factor that defines the complexity of patterns in e-beam writing. It shows that the small shot printing in e-beam machines need to be improved in order to guarantee mask pattern quality.

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Section: D Squarementioning

confidence: 96%

Section: D Squarementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Requirements of the e-beam shot quality for mask patterning of the sub-1X device

Park

Lee

et al. 2016

SPIE Proceedings

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“…The litany of well-known factors that impact lithographic solutions in this sense include: • Tradeoff of VSB writer accuracy for write time [1].…”

Section: Introductionmentioning

confidence: 99%

Model-based virtual VSB mask writer verification for efficient mask error checking and optimization prior to MDP

et al. 2014

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A methodology is described wherein a calibrated model-based 'Virtual' Variable Shaped Beam (VSB) mask writer process simulator is used to accurately verify complex Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) mask designs prior to Mask Data Preparation (MDP) and mask fabrication. This type of verification addresses physical effects which occur in mask writing that may impact lithographic printing fidelity and variability. The work described here is motivated by requirements for extreme accuracy and control of variations for today's most demanding IC products. These extreme demands necessitate careful and detailed analysis of all potential sources of uncompensated error or variation and extreme control of these at each stage of the integrated OPC/ MDP/ Mask/ silicon lithography flow. The important potential sources of variation we focus on here originate on the basis of VSB mask writer physics and other errors inherent in the mask writing process. The deposited electron beam dose distribution may be examined in a manner similar to optical lithography aerial image analysis and image edge log-slope analysis. This approach enables one to catch, grade, and mitigate problems early and thus reduce the likelihood for costly long-loop iterations between OPC, MDP, and wafer fabrication flows. It moreover describes how to detect regions of a layout or mask where hotspots may occur or where the robustness to intrinsic variations may be improved by modification to the OPC, choice of mask technology, or by judicious design of VSB shots and dose assignment.

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“…For sub-14-nm half pitch (HP) mask technology nodes, however, single VSB technology cannot keep up with the exponential growth of shot numbers at substantial reduced average shot size. 7 Further, there is the need to enhance the resist exposure dose by a factor of 5 to 10 up to 100 μC∕cm 2 in order to ensure sufficiently low line edge and line width roughness. 7,8 There are several proposals on how to realize a breakthrough multibeam (MB) column solution that can provide 10× to 40× more beam current than the most advanced VSB tools ( Fig.…”

Section: Introductionmentioning

confidence: 99%

Electron multibeam technology for mask and wafer writing at 0.1 nm address grid

Platzgummer

Klein

Loeschner

2013

J. Micro/Nanolith. MEMS MOEMS

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Abstract. IMS Nanofabrication realized a 50 keV electron multibeam proof-of-concept (POC) tool confirming writing principles with 0.1 nm address grid and lithography performance capability. The POC system achieves the predicted 5 nm 1 sigma blur across the 82 μm × 82 μm array of 512 × 512 (262,144) programmable 20 nm beams. 24-nm half pitch (HP) has been demonstrated and complex patterns have been written in scanning stripe exposure mode. The first production worthy system for the 11-nm HP mask node is scheduled for 2014 (Alpha), 2015 (Beta), and first-generation high-volume manufacturing multibeam mask writer (MBMW) tools in 2016. In these MBMW systems the max beam current through the column is 1 μA. The new architecture has also the potential for 1× mask (master template) writing. Substantial further developments are needed for maskless e-beam direct write (EBDW) applications as a beam current of >2 mA is needed to achieve 100 wafer per hour industrial targets for 300 mm wafer size. Necessary productivity enhancements of more than three orders of magnitude are only possible by shrinking the multibeam optics such that 50 to 100 subcolumns can be placed on the area of a 300 mm wafer and by clustering 10 to 20 multicolumn tools. An overview of current EBDW efforts is provided.

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The requirements for the future e-beam mask writer: statistical analysis of pattern accuracy

Cited by 7 publications

References 8 publications

Requirements of the e-beam shot quality for mask patterning of the sub-1X device

Requirements of the e-beam shot quality for mask patterning of the sub-1X device

Model-based virtual VSB mask writer verification for efficient mask error checking and optimization prior to MDP

Electron multibeam technology for mask and wafer writing at 0.1 nm address grid

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