Mass production worthy HfO/sub 2/-Al/sub 2/O/sub 3/ laminate capacitor technology using Hf liquid precursor for sub-100 nm DRAMs

Lee, Jung-Hyoung; Kim, Jong Pyo; Lee, Jong-Ho; Kim, Yun-Seok; Jung, Hyung-Seok; Lee, Nae-In; Kang, Ho-Kyu; Suh, Kwang-Pyuk; Jeong, Mun-Mo; Hyun, Kyu-Taek; Baik, Hion-Suck; Chung, Yeongu; Liu, Xinye; Ramanathan, Sasangan; Seidel, T. E.; Winkler, Jereld; Londergan, A.; Kim, Hae Young; Ha, Jung Min; Lee, Nam Kyu

doi:10.1109/iedm.2002.1175817

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…Chrome mask 2 was then applied to pattern the Au thin film on the micropillar by adopting a first lift-off process step. To avoid a very thick insulation film and process complexity, hafnium oxide (HfO 2 ) was used as the insulating layer between the two Au NREs, due to its excellent dielectric properties [40][41][42]. After the first Au layer was patterned on the pillars, a 100 nm HfO 2 layer was coated on the micropillar with a Cambridge Fiji Plasma ALD system (deposition rate, 0.9A/cycle; temperature, 200 • C).…”

Section: Microfabrication Processingmentioning

confidence: 99%

Electrochemical Redox Cycling Behavior of Gold Nanoring Electrodes Microfabricated on a Silicon Micropillar

et al. 2023

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We report the microfabrication and characterization of concentric gold nanoring electrodes (Au NREs), which were fabricated by patterning two gold nanoelectrodes on the same silicon (Si) micropillar tip. Au NREs of 165 ± 10 nm in width were micropatterned on a 6.5 ± 0.2 µm diameter 80 ± 0.5 µm height Si micropillar with an intervening ~ 100 nm thick hafnium oxide insulating layer between the two nanoelectrodes. Excellent cylindricality of the micropillar with vertical sidewalls as well as a completely intact layer of a concentric Au NRE including the entire micropillar perimeter has been achieved as observed via scanning electron microscopy and energy dispersive spectroscopy data. The electrochemical behavior of the Au NREs was characterized by steady-state cyclic voltammetry and electrochemical impedance spectroscopy. The applicability of Au NREs to electrochemical sensing was demonstrated by redox cycling with the ferro/ferricyanide redox couple. The redox cycling amplified the currents by 1.63-fold with a collection efficiency of > 90% on a single collection cycle. The proposed micro-nanofabrication approach with further optimization studies shows great promise for the creation and expansion of concentric 3D NRE arrays with controllable width and nanometer spacing for electroanalytical research and applications such as single-cell analysis and advanced biological and neurochemical sensing.

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Section: Microfabrication Processingmentioning

confidence: 99%

Electrochemical Redox Cycling Behavior of Gold Nanoring Electrodes Microfabricated on a Silicon Micropillar

et al. 2023

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“…Recently, the atomic layer deposition (ALD) is used when the high step coverage (13)(14)(15)(16) and high quality film formation at the low deposition temperature is required. However, the deposition rate of the current ALD is relatively low compared to the chemical vapor deposition (CVD), which can form the SiNx with relatively high deposition rate.…”

Section: Introductionmentioning

confidence: 99%

Effect of Hydrogen on Silicon Nitrides Formation by Microwave Excited Plasma Enhanced Chemical Vapor Deposition

Teramoto¹,

Nakao²,

Suwa³

et al. 2015

ECS Trans.

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The gas composition is one of the most important parameters for reducing process temperature of the plasma enhanced chemical vapor deposition. We investigate the effect of the gas flow rate of SiH4, H2, and N2 on the quality and the deposition rate of the silicon nitride films (SiNx) formed by the microwave excited PECVD. The SiH4 flow rate is most important parameter for controlling the deposition rate and the film quality in the PECVD using N2, H2, SiH4 gasses. The deposition rate strongly depends on the SiH4 flow rate; however the film quality was degraded with the increase of the flow rate. The hydrogen has an optimum flow rate for the high deposition rate and high quality film formation. The hydrogen effectively dissociates the SiH4 gas and makes the nitridation species (NHx), as the result, the optimal hydrogen improves the reaction efficiency of SiH4 and NHx.

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Atomic Layer Deposition

Gates¹

2020

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Mass production worthy HfO/sub 2/-Al/sub 2/O/sub 3/ laminate capacitor technology using Hf liquid precursor for sub-100 nm DRAMs

Cited by 3 publications

References 4 publications

Electrochemical Redox Cycling Behavior of Gold Nanoring Electrodes Microfabricated on a Silicon Micropillar

Electrochemical Redox Cycling Behavior of Gold Nanoring Electrodes Microfabricated on a Silicon Micropillar

Effect of Hydrogen on Silicon Nitrides Formation by Microwave Excited Plasma Enhanced Chemical Vapor Deposition

Atomic Layer Deposition

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