Material Aspects and Challenges for SOI FinFET Integration (Invited)

Dal, Mark J. Van; Vellianitis, G.; Duffy, Ray; Pawlak, Bartek; Lai, Kevin; Hikavyy, Andriy; Collaert, N.; Jurczak, M.; Lander, R.J.P.

doi:10.1149/ma2008-01/16/636

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2009

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“…In addition a high purity, high density film is needed to ensure the required electrical performance. For some advanced integration schemes, there is also a step coverage requirement (4). Typically either a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process is employed to deposit the high-dielectric.…”

Section: Introductionmentioning

confidence: 99%

Robust HfxSi1-xO2 Gate Dielectric using Co-injection Atomic Layer Deposition

et al. 2009

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Using a novel Atomic Layer Deposition (ALD) process in which multiple chemical precursors are simultaneously injected to form a monolayer on the substrate and then oxidized, we demonstrate a robust hafnium silicate film that can be easily tuned to meet specific device requirements. A large process window is demonstrated via physical and electrical performance of the film. The film has been fully integrated into a CMOS structure and repeatable parametric results over a wide range of film compositions are shown.

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Section: Introductionmentioning

confidence: 99%