Material properties and room-temperature nuclear detector response of wide bandgap semiconductors

Schieber, M.; Lund, J.C.; Olsen, Richard W.; McGregor, Douglas S.; Scyoc, J. M. Van; James, R. B.; Soria, E.; Bauser, E.

doi:10.1016/0168-9002(96)00030-7

Cited by 23 publications

(7 citation statements)

References 4 publications

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“…The development of these devices requires good quality substrates [1]. The common denominator for the room temperature semiconductors, is the difficulty of growing highly crystallographic perfect crystals having high chemical purity and exact stoichiometry [2].…”

Section: Introductionmentioning

confidence: 99%

Purification and crystal growth of TlBr for application as a radiation detector

Oliveira¹,

Chubaci²,

Armelin

et al. 2004

Cryst. Res. Technol.

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Thallium bromide is a semiconductor compound with high atomic number and density. It has a CsCl-type simple cubic crystal structure and it is non-hygroscopics. The TlBr crystals are relatively soft with a knoop hardness number of 12. In this work, the TlBr commercial powder was purified by zone refining and the purest material section was used for crystal growth by Bridgman method. Efforts have been concentrated on the purification of the TlBr. The purification efficiency has been evaluated (NAA and ICP-MS) by impurities reduction results after zone refining passes. The crystalline quality was evaluated by X-ray diffraction. The characterized TlBr crystal as a detector has shown good response to gamma radiation.

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Section: Introductionmentioning

confidence: 99%

Purification and crystal growth of TlBr for application as a radiation detector

Oliveira¹,

Chubaci²,

Armelin

et al. 2004

Cryst. Res. Technol.

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“…Micro-cracks and defects as well as improper passivation can cause high leakage currents, which can degrade the edge-pixel response seriously.The total leakage current of both sensor tiles shows a settling time of several minutes after voltage stepping. This can be an indication for the presence of deep-level defects, which act as trapping centres with a long de-trapping time[11].…”

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confidence: 99%

The influence of edge effects on the detection properties of cadmium telluride

Bosma

Beuzekom

Vähänen

et al. 2011

2011 IEEE Nuclear Science Symposium Conference Record

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Driven by the demand of various applications for a detection area that is larger than the active area of a single detector module, we explore the possibility to realise a large-area detector by a seamless tessellation of multiple detectors. This requires sensors with a minimum amount of dead area at the edge. In order to be able to reduce this area, edge effects must be understood and avoided or mitigated. In this paper, we report on first tests that are performed on diamond-blade diced slim-edge pieces of cadmium telluride with a last-pixel-to-edge distance of only 65 /-tm. The results indicate that the edge-pixel response is not significantly affected with respect to the leakage current and the charge collection efficiency. First measurements towards a quantification of the detective quantum efficiency have been made on edge pixels by determining the pixel response function and the noise power spectrum.

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“…Studies on a large number of CZT crystals and detectors reveal several problems limiting the device response, such as inhomogeneity of the crystals, excessive trapping of charge, cracking of ingots, and variations in the bulk resistivity. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] The present need for room temperature radiation spectrometers that can resolve the unique radiological emissions of nuclear materials and the clear potential of CZT to satisfy this need has led to a twopronged approach to develop the sensors. A near term effort has focused on optimizing the performance of currently available material by using pulse processing algorithms to mitigate the effects of hole trapping on detector energy resolution [15][16][17] or using electrontransport-only designs that negate most of the effects of hole transport.…”

Section: Introductionmentioning

confidence: 99%

“…[18][19][20][21][22] In parallel, a longer term effort has focused on improving the quality of the material by modifying the growth, purification, and detector processing technology. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] Resolving the problems limiting large volume CZT spectrometers involves advances in the purity, crystallinity, concentration of defects, and control of the electrical compensation mechanism. These are difficult issues, not amenable to quick and simple fixes.…”

Section: Introductionmentioning

confidence: 99%

Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance

James

Brunett

Heffelfinger

et al. 1998

Journal of Elec Materi

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Il-VI WORKSHOP PurposeThe purpose of this Workshop is to bring together the universities and the industrial and governmental communities that work with II-VI materials which include HgCdTe and other IR materials, Il-VI semiconductor alloys used for x-ray and y-ray detectors, ZnSe-based Il-VI photonic materials, and II:VI photorefractive materials. The Workshop aims at advancing the understanding of the physics and chemistry of these materials. Areas of InterestAreas covered include a broad range of disciplines: materials engineering, intrinsio?' and extrinsic defects including doping, surface sciences, manufacturing/processing, electrical, optical, and magneto-optical properties as well as interactions between them. Workshop FormatTo provide more discussion time, the Workshop program will consist of about 50 papers.When appropriate, invited, encouraged, and contributed papers with a common theme will be grouped for presentation and then followed by an extensive discussion period. Scheduled morning and afternoon breaks as well as lunch, provided as part of the workshop fee, can also be used as additional discussion time. To further promote informal discussion and interaction, the first two days will conclude with a wine and: cheese break accompanied by table-top displays from commercial vendors displaying products and services of interest to the community.

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Material properties and room-temperature nuclear detector response of wide bandgap semiconductors

Cited by 23 publications

References 4 publications

Purification and crystal growth of TlBr for application as a radiation detector

Purification and crystal growth of TlBr for application as a radiation detector

The influence of edge effects on the detection properties of cadmium telluride

Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance

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