Material removal and surface generation mechanisms in diamond wire sawing of silicon crystal

Gao, Yufei; Ge, Peng; Zhang, Lei

doi:10.1016/j.mssp.2019.104642

Cited by 46 publications

(20 citation statements)

References 23 publications

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“…Wire-saw slicing R a 0.14-4.23 [6][7][8][9][10][11] 28.7-94.4 [10,11] Collapse pits [6][7][8][9]11] Fragmentation [7,8] Chipping-off [8] Scratching groove [6][7][8][9][10][11] [ [6][7][8][9][10][11] Diamond grinding R a 0.07-3.35 [12,13] N/A Grinding mark [12,14] Pitting [12,14] Crack [12,14,15] Chipping-off [16] [ [12][13][14][15][16] WEDM R a 2.31-6.3 [17][18][19][20] 0.8-22.3 [17,18,20,21] Chipping-off…”

Section: Materials Remove Rate (Mm 3 /Min) Challenges Referencementioning

confidence: 99%

“…Table 1. Comparison of methods used in processing of silicon wafers [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

“…The preparation of semiconductor wafers involves a series of manufacturing processes, including seeding, crystal growth, slicing into wafers, grinding, chemical-mechanical polishing, electrical-chemical etching, and coating [ 1 , 2 , 3 , 4 , 5 ]. Table 1 lists the comparisons of the methods in the processing of silicon wafers [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. The extreme hardness (~10 GPa) and strength (170 GPa) of the monocrystalline substrate materials necessitates the use of wire-saw slicing [ 6 , 7 , 8 , 9 , 10 , 11 ] and diamond grit grinding [ 12 , 13 , 14 , 15 , 16 ].…”

Section: Introductionmentioning

confidence: 99%

“…Table 1 lists the comparisons of the methods in the processing of silicon wafers [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. The extreme hardness (~10 GPa) and strength (170 GPa) of the monocrystalline substrate materials necessitates the use of wire-saw slicing [ 6 , 7 , 8 , 9 , 10 , 11 ] and diamond grit grinding [ 12 , 13 , 14 , 15 , 16 ]. Diamond-coated wire saws slice through the silicon ingot easily; however, the low fracture toughness (0.7 MPa·m 1/2 ) often leads to collapse pits [ 6 , 7 , 8 , 9 , 11 ], cracking [ 7 , 8 ], and scratching grooves [ 6 , 7 , 8 , 9 , 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

“…The extreme hardness (~10 GPa) and strength (170 GPa) of the monocrystalline substrate materials necessitates the use of wire-saw slicing [ 6 , 7 , 8 , 9 , 10 , 11 ] and diamond grit grinding [ 12 , 13 , 14 , 15 , 16 ]. Diamond-coated wire saws slice through the silicon ingot easily; however, the low fracture toughness (0.7 MPa·m 1/2 ) often leads to collapse pits [ 6 , 7 , 8 , 9 , 11 ], cracking [ 7 , 8 ], and scratching grooves [ 6 , 7 , 8 , 9 , 10 , 11 ]. This has led to the development of alternative solutions aimed at reducing the contact force.…”

Section: Introductionmentioning

confidence: 99%

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Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation

et al. 2021

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This paper outlines notable advances in the wire electrical discharge machining of polycrystalline silicon workpieces for wafer preparation. Our use of assisting electrodes permits the transfer of aluminum particles to the machined surface of the polycrystalline silicon workpieces, to enhance conductivity and alter surface topography regardless of the silicon’s crystallographic structure and diamond-type lattice. This in-process surface modification technique was shown to promote material removal and simultaneously preserve the integrity of the machined surfaces with preferable surface textures. In the validation experiment, the 25 mm-thick assisting electrodes deposited a notable concentration of aluminium on the machined surface (~3.87 wt %), which greatly accelerated the rate of material removal (~9.42 mg/s) with minimal surface roughness (Sa ~5.49 μm) and moderate skewness (−0.23). The parameter combination used to obtain the optimal surface roughness (Sa 2.54 μm) was as follows: open voltage (80 V), electrical resistance (1.7 Ω), pulse-on time (30 μs), and electrode thickness (15 mm). In multiple objective optimization, the preferred parameter combination (open voltage = 80 V, resistance = 1.4 Ω, pulse-on time = 60 μs, and assisting electrode thickness = 25 mm) achieved the following appreciable results: surface modification of 3.26 ± 0.61 wt %, material removal rate of 7.08 ± 2.2 mg/min, and surface roughness of Sa = 4.3 ± 1.67 μm.

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