Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

Increased Subthreshold Current due to Source–Drain Direct Tunneling in Ultrashort-Channel III–V Metal–Oxide–Semiconductor Field-Effect Transistors

“…One approach may be the choice of a material with a higher carrier transport mass, or to be more precise, a higher tunneling mass. 8,19) Higher mass materials would also help to reduce the performance degradation caused by the density-of-states bottleneck in the quantum capacitance limit, i.e., for extremely small T ox , and thus eventually lead to a higher current drivability. 20,21) The results of these studies suggest that, depending on the device dimensions, there may be a material with an optimal band structure for both reducing leakage current due to SD direct tunneling and for realizing higher current drivability.…”

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment

“…Entering the nano-node process industry because of the feature-size shrinkage of semiconductor devices [8], of course, confronts certain barrier challenges, such as the thinner gate oxide [9] easily inducing the directing tunneling [10][11][12] effect and the higher threshold voltage [13] deteriorating the source/drain (S/D) current. Utilizing a stacked structure of HfO x /ZrO y /HfO x (HZH) as a high-K (HK) [14] gate dielectric, it seems a workable way to provide a plentiful high-K [15,16] value fulfilling the drive current concern and constrain some transport charges from channel substrate to gate electrode owing to the lower energy band in ZrO y [17] layer, producing a lower gate leakage [18] as well as the promotion of crystallization temperature [19].…”

Engineering Nanowire n-MOSFETs at <formula formulatype="inline"><tex Notation="TeX">$L_{g}&lt;8~{\rm nm}$</tex></formula>

“…A light transport mass, however, leads to an increased source drain tunneling and can lead to degraded OFF state characteristics [8]. A heavy transport mass can limit S-D tunneling but it also means lower channel mobility or degraded ON state characteristics.…”