Material-selective etching of InP and an InGaAsP alloy

Fiedler, F.; Schlachetzki, A.; Klein, G.

doi:10.1007/bf00644669

Cited by 22 publications

(4 citation statements)

References 18 publications

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“…• The diode vias are etched using CH 4 for InP sacrificial layers [37] and in pure HCl (36 %) for Al 0.7 Ga 0.3 As layers [38]. In both cases the temperature of the solution is lowered to 1 • C to improve the selectivity.…”

Section: A Nanofabrication Processmentioning

confidence: 99%

Design and Optical Properties of Electromechanical Double-Membrane Photonic Crystal Cavities

Midolo

Fiore

2014

IEEE J. Quantum Electron.

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Abstract-We discuss relevant design considerations for the fabrication of electromechanically tunable photonic crystal cavities based on double semiconductor slabs. A simple optical and electromechanical model of the device based on coupled-mode theory and electrostatics is discussed and used jointly with 3-D finite-element calculations of optical cavity modes to extract the tuning-range dependence on geometrical parameters. A design rule, which avoids the sticking of membranes due to capillary forces and keeps a large tunability, is defined. The details of the fabrication process and a summary of the experimental results on GaAs and InGaAsP/InP material systems are given. We also address the problem of nonsymmetric devices, where the thicknesses of the membranes are not exactly the same, resulting in an imbalanced power emission of coupled modes.

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Section: A Nanofabrication Processmentioning

confidence: 99%

Design and Optical Properties of Electromechanical Double-Membrane Photonic Crystal Cavities

Midolo

Fiore

2014

IEEE J. Quantum Electron.

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“…The fabrication steps in Fig. 7b-e make use of two different wet etches, one selective to InP and one selective to InGaAs [82], which will be the same wet etch chemistries that were used in the fabrication process of our previous acoustoelectric work. If the InGaAsP waveguide layer (Fig.…”

Section: A Acoustoelectric Fabrication Modified For Ingaasp Waveguidesmentioning

confidence: 99%

Modulation of Brillouin optomechanical interactions via acoustoelectric phonon-electron coupling

Otterstrom¹,

Storey²,

Behunin³

et al. 2021

Preprint

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Optomechanical Brillouin nonlinearities-arising from the coupling between traveling photons and phonons-have become the basis for a range of powerful optical signal processing and sensing technologies. The dynamics of such interactions are largely set and limited by the host material's elastic, optical, and photo-elastic properties, which are generally considered intrinsic and static.Here we show for the first time that it is feasible to dynamically reconfigure the Brillouin nonlinear susceptibility in transparent semiconductors through acoustoelectric phonon-electron coupling. Acoustoelectric interactions permit a wide range of tunability of the phonon dissipation rate and velocity, perhaps the most influential parameters in the Brillouin nonlinear susceptibility. We develop a Hamiltonian-based analysis that yields self-consistent dynamical equations and noise coupling, allowing us to explore the physics of such acoustoelectrically enhanced Brillouin (AEB) interactions and show that they give rise to a dramatic enhancement of the performance of Brillouin-based photonic technologies. Moreover, we show that these AEB effects can drive systems into new regimes of fully-coherent scattering that resemble the dynamics of optical parametric processes, dramatically different than the incoherent traditional Brillouin limit. We propose and computationally explore a particular semiconductor heterostructure in which the acoustoelectric interaction arises from a piezoelectric phonon-electron coupling. We find that this system provides the necessary piezoelectric and carrier response (k 2 ≈ 6%), favorable semiconductor materials properties, and large optomechanical confinement and coupling (|g0| ≈ 8000 (rad/s) √ m) sufficient to demonstrate these new AEB enhanced optomechanical interactions.

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“…The etching depth of the InGaAsP can be precisely controlled with a nanometer-scale precision by using the InP etch-stop layer, owing to the excellent selectivity of the chemical etching process such as H 2 SO 4 +H 2 O 2 +H 2 O system [25]. Consequently, we can precisely tune the value of d in Type 2 PC.…”

Section: Proposal Of a Width-tolerant Pc Using A Novel Layerstackmentioning

confidence: 99%

Numerical Study on Fabrication Tolerance of Half-Ridge InP Polarization Converters

Zaitsu

Tanemura

Nakano

2014

IEICE Trans. Electron.

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SUMMARY Integrated InP polarization converters based on half-ridge structure are studied numerically. We demonstrate that the fabrication tolerance of the half-ridge structure can be extended significantly by introducing a slope at the ridge side and optimizing the thickness of the residual InGaAsP layer. High polarization conversion over 90% is achieved with the broad range of the waveguide width from 705 to 915 nm, corresponding to a factor-of-two or larger improvement in the fabrication tolerance compared with that of the conventional polarization converters. Finally we present a simple fabrication procedure of this newly proposed structure, where the thickness of the residual InGaAsP layer is controlled precisely by using a thin etch-stop layer.

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Material-selective etching of InP and an InGaAsP alloy

Cited by 22 publications

References 18 publications

Design and Optical Properties of Electromechanical Double-Membrane Photonic Crystal Cavities

Design and Optical Properties of Electromechanical Double-Membrane Photonic Crystal Cavities

Modulation of Brillouin optomechanical interactions via acoustoelectric phonon-electron coupling

Numerical Study on Fabrication Tolerance of Half-Ridge InP Polarization Converters

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