2021
DOI: 10.1155/2021/8842777
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Material Sputtering with a Multi‐Ion Species Plasma Focused Ion Beam

Abstract: Focused ion beams are an essential tool for cross-sectional material analysis at the microscale, preparing TEM samples, and much more. New plasma ion sources allow for higher beam currents and options to use unconventional ion species, resulting in increased versatility over a broader range of substrate materials. In this paper, we present the results of a four-material study from five different ion species at varying beam energies. This, of course, is a small sampling of the enormous variety of potential spec… Show more

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Cited by 7 publications
(11 citation statements)
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“…This compares with a sputter rate of 7.7 µm 3 /nC for gallium in ice 24 . These sputter rates are ~20-100 times higher than those reported at 30kV in Silicon for these plasma beams 23 . This is of the same order as the factor of ten that is suggested within the community as a rule of thumb for the difference between milling in vitrified ice and silicon 25 .…”
Section: Milling Rates Of Plasma Ions On Vitreous Cellular Samplesmentioning
confidence: 54%
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“…This compares with a sputter rate of 7.7 µm 3 /nC for gallium in ice 24 . These sputter rates are ~20-100 times higher than those reported at 30kV in Silicon for these plasma beams 23 . This is of the same order as the factor of ten that is suggested within the community as a rule of thumb for the difference between milling in vitrified ice and silicon 25 .…”
Section: Milling Rates Of Plasma Ions On Vitreous Cellular Samplesmentioning
confidence: 54%
“…The sputter rates for oxygen and nitrogen are the same within error. While there is an expectation that a greater MW should correlate with sputter rate from first logic, the sputter rate for different plasmas has been demonstrated previously to be material dependent 23 . In our case, the values are calculated for (vitreous) biological samples.…”
Section: Discussionmentioning
confidence: 94%
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“…Argon has mostly been used for broad ion beam (BIB) applications (Unocic et al, 2010), but it is yet to be determined if Ar PFIB could be used exclusively for TEM sample preparation. Oxygen PFIB has shown to be useful for the fast removal of carbon-based materials, but is overall too reactive to work effectively with most materials (Brogden et al, 2021). Xe PFIB, on the other hand, thanks to its heavier ion mass (and thus high material sputter yield) and chemical inertness, has become the go-to instrument for large length scale (>100 μ m) cross-sectioning and FIB-SEM tomography (Burnett et al, 2016).…”
Section: Introductionmentioning
confidence: 99%
“…Xe + ion beam has being greatly accepted by FIB microscopy community providing the advantages of not only for high sputtering yield, high current milling at 30 keV for a large 3D volume data acquisition and for correlated microscopy applications [2] , but also for a much less ion implantation and amorphization of gallium free TEM specimen preparation [3]. Reactive oxygen ion beam dramatically improves sample milling quality for carbon-carbon bonding hard or soft materials by smoothing the cut-face very effectively during sputtering [4]. Low energy broad Ar + ion beam for sample preparation have been widely used for material science sample preparation for decades but it is not integrated with FIB-SEM DualBeam microscope in general.…”
mentioning
confidence: 99%