Materials Chemistry of Group 13 Nitrides

Devi, Anjana; Schmid, Rochus; Müller, Jens; Fischer, Roland A.

doi:10.1007/b136142

Cited by 14 publications

(4 citation statements)

References 136 publications

(150 reference statements)

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“…Also, it can be observed that a dependence of the thickness on the In x Ga 1−x N fibre with the increment of indium content. Some morphological formations similar to the present work have been reported in the research of GaN as nanowires (Devi et al 2005), using similar methods of growth (Carbajal et al 2011) and even other metals such as nucleation centres (Zhou et al 2012). There is a strong formation of GaN structures like wires and rods, as in the present micro-fibres, when a metal thin layer is used as nucleation catalyst.…”

Section: Electron Microscopysupporting

confidence: 88%

In x Ga1−x N fibres grown on Au/SiO2 by chemical vapour deposition

et al. 2014

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The growth of In x Ga 1−x N films (x = 0•1 and x = 0•2) on a thin gold layer (Au/SiO 2) by chemical vapour deposition (CVD) at 650 • C is reported. As a novelty, the use of a GaIn metallic alloy to improve the indium incorporation in the In x Ga 1−x N is proposed. The results of high quality In x Ga 1−x N films with a thickness of three micrometres and the formation of microfibres on the surface are presented. A morphological comparison between the In x Ga 1−x N and GaN films is shown as a function of the indium incorporation. The highest crystalline In x Ga 1−x N films structure was obtained with an indium composition of x = 0•20. Also, the preferential growth on the (002) plane over In 0•2 Ga 0•8 N was observed by means of X-ray diffraction. The thermoluminescence (TL) of the In x Ga 1−x N films after beta radiation exposure was measured indicating the presence of charge trapping levels responsible for a broad TL glow curve with a maximum intensity around 150 • C. The TL intensity was found to depend on composition being higher for x = 0•1 and increases as radiation dose increases.

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Section: Electron Microscopysupporting

confidence: 88%

In x Ga1−x N fibres grown on Au/SiO2 by chemical vapour deposition

et al. 2014

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“…For bis(arene)chromium (BBC and BEBC), the dissociation energy of the metal-ligand bonds determines the efficiency of the process [51]. It is worth mentioning how difficult it is to resolve the decomposition mechanism at the level of elementary steps under actual growth conditions: high temperatures make intermediates very difficult to identify and, often, only the rate constants for the overall process can be measured [54].…”

Section: Kinetic Pathways: Study Of the Reactionsmentioning

confidence: 99%

Chromium Carbide Growth by Direct Liquid Injection Chemical Vapor Deposition in Long and Narrow Tubes, Experiments, Modeling and Simulation

et al. 2018

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Chromium carbide layers were deposited using liquid-injection metal-organic chemical vapor deposition inside long (0.3 to 1 m) and narrow (8 to 24 mm in diameter) metallic tubes. The deposition was carried out using a molecular single-source, bis(benzene)chromium (BBC), as representative of the bis(arene)metal family diluted in toluene and injected with N 2 as carrier gas. A multicomponent mass transport model for the simulation of the coupled fluid flow, heat transfer and chemistry was built. The kinetic mechanism of the growth of CrC x films was developed with the help of large-scale experiments to study the depletion of the precursors along the inner wall of the tube. The model fits well in the 400-550 • C temperature range and in the 1.3 × 10 2 to 7 × 10 3 Pa pressure range. The pressure is shown to have a pronounced effect on the deposition rate and thickness uniformity of the resulting coating. Below 525 • C the structure, composition and morphology of the films are not affected by changes of total pressure or deposition temperature. The coatings are amorphous and their Cr:C ratio is about 2:1, i.e., intermediate between Cr 7 C 3 and Cr 3 C 2. The model was applied to the design of a long reactor (1 m), with a double injection successively and alternatively undertaken at each end to ensure the best uniformity with sufficient thickness. This innovative concept can be used to optimize industrial deposition processes inside long and narrow tubes and channels.

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“…Transition metal hydrazides, for instance, are believed to play an important role as intermediates in the biological and laboratory-based reduction of dinitrogen to ammonia and are of interest in the context of N−C bond formation reactions starting from hydrazines and unsaturated substrates . Aluminum, gallium, and indium hydrazides have been tested as molecular precursors for the synthesis of element nitrides via metallo organic chemical vapor deposition (MOCVD) and related procedures . Further, the two directly connected nitrogen donor atoms of a hydrazide group generate a fascinating structural diversity in hydrazine chemistry, and many different hydrazine transition metal complexes have been isolated and characterized .…”

Section: Introductionmentioning

confidence: 99%

Oligonuclear Gallium Nitrogen Cage Compounds: Molecular Intermediates on the Way from Gallium Hydrazides to Gallium Nitride

et al. 2010

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Gallium hydrazides are potentially applicable as facile starting compounds for the generation of GaN by thermolysis. The decomposition pathways are, however, complicated and depend strongly on the substituents attached to the gallium atoms and the hydrazido groups. This paper describes some systematic investigations into the thermolysis of the gallium hydrazine adduct Bu(t)(3)Ga←NH(2)-NHMe (1a) and the dimeric gallium hydrazides [R(2)Ga(N(2)H(2)R')](2) (2b, R = Bu(t), R' = Bu(t); 2c, R = Pr(i), R' = Ph; 2d, R = Me, R' = Bu(t)) which have four- or five-membered heterocycles in their molecular cores. Heating of the adduct 1a to 170 °C gave the heterocyclic compound Bu(t)(2)Ga(μ-NH(2))[μ-N(Me)-N(=CH(2))]GaBu(t)(2) (3) by cleavage of N-N bonds and rearrangement. 3 was further converted at 400 °C into the tetrameric gallium cyanide (Bu(t)(2)GaCN)(4) (4). The thermolysis of the hydrazide (Bu(t)(2)Ga)(2)(NH-NHBu(t))(2) (2b) at temperatures between 270 and 420 °C resulted in cleavage of all N-N bonds and the formation of an octanuclear gallium imide, (Bu(t)GaNH)(8) (6). The trimeric dialkylgallium amide (Bu(t)(2)GaNH(2))(3) (5) was isolated as an intermediate. Thermolysis of the hydrazides (Pr(i)(2)Ga)(2)(NH-NHPh)(NH(2)-NPh) (2c) and (Me(2)Ga)(2)(NH-NHBu(t))(2) (2d) proceeded in contrast with retention of the N-N bonds and afforded a variety of novel gallium hydrazido cage compounds with four gallium atoms and up to four hydrazido groups in a single molecule: (Pr(i)Ga)(4)(NH-NPh)(3)NH (7), (MeGa)(4)(NH-NBu(t))(4) (8), (MeGa)(4)(NH-NBu(t))(3)NBu(t) (9), and (MeGa)(4)(NHNBu(t))(3)NH (10). Partial hydrolysis gave reproducibly the unique octanuclear mixed hydrazido oxo compound (MeGa)(8)(NHNBu(t))(4)O(4) (11).

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Materials Chemistry of Group 13 Nitrides

Cited by 14 publications

References 136 publications

In x Ga1−x N fibres grown on Au/SiO2 by chemical vapour deposition

In x Ga1−x N fibres grown on Au/SiO2 by chemical vapour deposition

Chromium Carbide Growth by Direct Liquid Injection Chemical Vapor Deposition in Long and Narrow Tubes, Experiments, Modeling and Simulation

Oligonuclear Gallium Nitrogen Cage Compounds: Molecular Intermediates on the Way from Gallium Hydrazides to Gallium Nitride

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