Materials theory based modeling of wide band gap semiconductors: from basic properties to devices

Brennan, Kevin F.; Bellotti, E.; Farahmand, M.; Haralson, Joe Nathan; Ruden, P. P.; Albrecht, John D.; Sutandi, A.

doi:10.1016/s0038-1101(99)00224-5

Cited by 37 publications

(20 citation statements)

References 26 publications

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“…In order to help facilitate the process of evaluating the device potential of the wide-band-gap semiconductors and in particular the III nitrides, we have developed a theoretical modelling tool that can operate relatively independently of experimental investigation. This approach is referred to as materials-theory-based modelling [6][7][8]. The full details of the method have been exhaustively reported elsewhere [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

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Comparative Study of Photoluminescence Dynamics of Tris(8-hydroxyquinoline) Aluminum-Based Organic Multilayer Structures with Different Types of Energy Lineups

Fujita

Nakazawa

Asano

et al. 2000

Jpn. J. Appl. Phys.

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In this paper, we present a comparison of the direct-current (DC) and radiofrequency (RF) breakdown behaviours of representative wurtzite-and zincblende-phase GaN MESFET structures based on a theoretical analysis. The calculations are made using a full-band ensemble Monte Carlo simulation that includes a numerical formulation of the impact ionization transition rate. Calculations of both the DC and RF breakdown voltages are presented for submicron MESFET devices made from either wurtzite-or zinc-blende-phase GaN. The devices are otherwise identical. It is found that the DC breakdown voltage in the wurtzite-phase GaN MESFET is significantly larger than that in the zinc-blende-phase device. This is due to the fact that electron heating occurs more rapidly within the zinc-blende phase than the wurtzite phase of GaN. As a consequence, avalanche breakdown occurs at higher applied field strengths and voltages in the wurtzite phase than in the zinc-blende phase of GaN. It is further found that the RF breakdown voltage of the devices increases with increasing frequency of the applied large-signal RF excitation.

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Section: Introductionmentioning

confidence: 99%

“…This approach is referred to as materials-theory-based modelling [6][7][8]. The full details of the method have been exhaustively reported elsewhere [6][7][8]. A key ingredient within the materials-theory-based modelling method is the full-band ensemble Monte Carlo simulation [9].…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Photoluminescence Dynamics of Tris(8-hydroxyquinoline) Aluminum-Based Organic Multilayer Structures with Different Types of Energy Lineups

Fujita

Nakazawa

Asano

et al. 2000

Jpn. J. Appl. Phys.

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“…They considered acoustic, polar optical and intervalley scattering in their calculations. Brennan et al performed full band MC simulations and compared the results for different III-V materials [104]. He reported a higher electron velocity for wurtzite GaN than the previous simulation data.…”

Section: 4mentioning

confidence: 99%

Monte Carlo Device Simulations

Raleva¹,

Shaik

Hathwar

et al. 2011

Applications of Monte Carlo Method in Science and Engineering

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As semiconductor devices are scaled into nanoscale regime, first velocity saturation starts to limit the carrier mobility due to pronounced intervalley scattering, and when the device dimensions are scaled to 100 nm and below, velocity overshoot (which is a positive effect) starts to dominate the device behavior leading to larger ON-state currents. Alongside with the developments in the semiconductor nanotechnology, in recent years there has been significant progress in physical based modeling of semiconductor devices. First, for devices for which gradual channel approximation can not be used due to the two-dimensional nature of the electrostatic potential and the electric fields driving the carriers from source to drain, drift-diffusion models have been exploited. These models are valid, in general, for large devices in which the fields are not that high so that there is no degradation of the mobility due to the electric field. The validity of the drift-diffusion models can be extended to take into account the velocity saturation effect with the introduction of field-dependent mobility and diffusion coefficients. When velocity overshoot becomes important, drift diffusion model is no longer valid and hydrodynamic model must be used. The hydrodynamic model has been the workhorse for technology development and several high-end commercial device simulators have appeared including Silvaco, Synopsys, Crosslight, etc. The advantages of the hydrodynamic model are that it allows quick simulation runs but the problem is that the amount of the velocity overshoot depends upon the choice of the energy relaxation time. The smaller is the device, the larger is the deviation when using the same set of energy relaxation times. A standard way in calculating the energy relaxation times is to use bulk Monte Carlo simulations. However, the energy relaxation times are material, device geometry and doping dependent parameters, so their determination ahead of time is not possible. To avoid the problem of the proper choice of the energy relaxation times, a direct solution of the Boltzmann Transport Equation (BTE) using the Monte Carlo method is the best method of choice. That is why the focus of this review paper is on explaining basic Monte Carlo device simulator and then the focus will be shifted on the inclusion of various higher order effects that explain particular physical phenomena or processes.The Monte Carlo book chapter is organized as follows. First, the idea behind the Monte Carlo technique is outlined by revoking the path integral method for the solution of the BTE. This approach naturally leads to the free-flight-scatter sequence that is used in solving the BTE using the Monte Carlo method. Various scattering mechanisms relevant for different materials are given to completely specify the collision integral in the BTE. A discussion followed with the presentation of a generic flow-chart for implementing bulk Monte Carlo code is presented. Note that bulk Monte Carlo approach is suitable for the characterization of ma...

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“…But sapphire substrate has many problem such as lattice constants mismatch, coefficient of thermal expansion mismatch between GaN epilayer and sapphire substrate. 11,12) The sapphire substrate has other critical problems. They are a low thermal conductivity and non-conductivity.…”

Section: Introductionmentioning

confidence: 99%

Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy

Kim

Lee

Jung

et al. 2013

Jpn. J. Appl. Phys.

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In this paper, the GaN poly crystal was grown by hydride vapor phase epitaxy at 1090 C on the metallic compound graphite substrate with good heat dissipation. The coefficient of thermal expansion of the metallic compound graphite substrate is 6.2 m/(mÁK). The heat conductivity is 150 W/(mÁK), and specific gravity is 3.1. The metallic compound graphite substrate was gained higher thermal conductivity more than the sapphire substrate through by injecting the nonferrous metal in the porosity carbon graphite base. The GaN poly crystal grown along the [0001] c-axis by hydride vapor phase epitaxy was observed on the metallic compound graphite substrate through the scanning electron microscope and energy dispersive spectroscopy. And electrical characteristic of substrate with each different condition was investigated by Hall Effect measurement. #

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Materials theory based modeling of wide band gap semiconductors: from basic properties to devices

Cited by 37 publications

References 26 publications

Comparative Study of Photoluminescence Dynamics of Tris(8-hydroxyquinoline) Aluminum-Based Organic Multilayer Structures with Different Types of Energy Lineups

Comparative Study of Photoluminescence Dynamics of Tris(8-hydroxyquinoline) Aluminum-Based Organic Multilayer Structures with Different Types of Energy Lineups

Monte Carlo Device Simulations

Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy

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