Materials to Systems Co-Optimization Platform for Rapid Technology Development Targeting Future Generation CMOS Nodes

Bazizi, El Mehdi; Pal, Ashish; Kim, Jongchol; Liu, Jiang; Reddy, V H Prasad; Alexander, Blessy; Ayyagari-Sangamalli, Buvna

doi:10.1109/ted.2021.3076757

Cited by 19 publications

(6 citation statements)

References 13 publications

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“…A design technology co-optimization (DTCO) approach for advanced FinFETs and GAAFETs must be established to optimize the PPA for complex structures and processes. For favorable integration of more complex devices such as CFETs with BPR, BS PDN or monolithic 3D ICs and heterogeneous integration systems, a system technology co-optimization (STCO) [ 22 ] method must be established for sustained development of advanced ICs with enhanced functionality, energy efficiency and power.…”

Section: Benefits and Challenges For Transistor Structure Innovationsmentioning

confidence: 99%

New structure transistors for advanced technology node CMOS ICs

Zhang,

Luo

et al. 2024

National Science Review

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Over recent decades, advancements in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor (FinFET) and gate-all-around FET (GAAFET), more gate electrodes have been added to 3D channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore’s law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs (CFETs), 3D stack (3DS)-FETs and vertical-channel transistors, for enhanced density and variable circuit or system design represents a revolutionary scaling approach for sustained IC development. Herein, innovative works on specific structures, key process breakthroughs, shrinking cell sizes, and design methodologies for transistor structure research and development are reviewed. Perspectives on future innovations in advanced transistors with new channel materials and operating theories are also discussed.

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Section: Benefits and Challenges For Transistor Structure Innovationsmentioning

confidence: 99%

New structure transistors for advanced technology node CMOS ICs

Zhang,

Luo

et al. 2024

National Science Review

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“…El and colleagues proposed a materials to systems co‐optimization (MSCO), building on design technology co‐optimization (DTCO) and systematic technology co‐optimization (STCO) methods. [ 210 ] DTCO encompasses techniques to optimize both the semiconductor process and the circuit design together. Meanwhile, the industry is seeking innovative packaging technologies for functional scaling.…”

Section: Potential Applications Of 2dm Ics and Challengesmentioning

confidence: 99%

mentioning

confidence: 99%

Two‐Dimensional Semiconductors: From Device Processing to Circuit Integration

Sheng,

Dong,

Zhu

et al. 2023

Adv Funct Materials

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The atomically thin nature and exceptional electrical properties of 2D materials (2DMs) have garnered significant interest in circuit applications. Researchers have developed circuits based on wafer‐level 2DM fabrication and monolithic integration in the laboratory. Numerous studies have been conducted on discrete device processes; however, circuit manufacturing is a multifaceted and methodical engineering process that demands seamless integration of multiple procedures. Notably, the optimization of crucial processes holds paramount significance in achieving expected results. This review presents the existing research on process integration of 2DM devices and circuit applications. The selection of suitable 2DMs for circuit applications is outlined, considering their excellent theoretical properties and feasible high‐quality growth processes. Drawing on highly mature semiconductor manufacturing process, while incorporating customized key processes, 2DM devices have the potential to strongly compete with, and even outperform, the conventional devices. Finally, the recent circuit applications of 2DMs are also discussed in detail. 2DM integrated circuits (2DM ICs) are now being practically applied in advanced manufacturing, transitioning from laboratory development to fabrication plant deployment. The implementation of underlying 2DM IC fabrication provides effective and unique solutions for More Moore, More than Moore, and Beyond CMOS technology routes.

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“…No mature representation of the flow of the design of 2D materials‐based VLSI has been provided thus far. A simulation flow for 2D materials‐based VLSI has been proposed by referring to silicon technology, [ 190 ] as depicted in Figure . The performance of the device at the transistor level is first investigated based on the materials and physical mechanisms used, and the SPICE model is then evaluated.…”

Section: Model and Simulation Of 2d Semiconductor Devices And Vlsimentioning

confidence: 99%

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

et al. 2022

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2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling‐down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary–metal–oxide semiconductor in order to summarize obstacles to the goal of developing high‐density and low‐power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large‐scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of “more than Moore” research.

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Materials to Systems Co-Optimization Platform for Rapid Technology Development Targeting Future Generation CMOS Nodes

Cited by 19 publications

References 13 publications

New structure transistors for advanced technology node CMOS ICs

New structure transistors for advanced technology node CMOS ICs

Two‐Dimensional Semiconductors: From Device Processing to Circuit Integration

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

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