Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication—A Nanomaterial Approach

Gowthaman, Naveenbalaji; Srivastava, Viranjay M.

doi:10.3390/nano12193374

Cited by 10 publications

(6 citation statements)

References 44 publications

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“…The left and right fermi levels (E FL -E RL ) and the Transmission (T) have been used to generate the normalized current density spectra (i z /i z , avg). As demonstrated in the author's earlier research [44][45][46], the current density distribution of Si-NW reaches uniformity up to an energy value of 2.5 eV and then increases when the Wagner number (W ag > 5) is exceeded.…”

Section: Resultsmentioning

confidence: 79%

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Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

Paramasivam,

Gowthaman,

Srivastava

2024

Silicon

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In the realm of electronics, the performance of Silicon Trigate Rectangular Nanowires (Si-TRNW) and the structural characteristics of <001> orientation using tight-binding models have been analyzed. The fast algorithm based on the tight-binding model for Trigate Silicon nanowires yielded a remarkable ION/IOFF ratio of 1.49 × 1010 and leakage current (ILeak or IOFF) of 3.7 × 10−17μA. Furthermore, a maximum conduction band energy level (Ecmax) of −0.003 eV and a Subthreshold Slope (SS) of 120 mV has been obtained for a channel length of 15 nm. At an energy level of 3 eV, a high Transmission coefficient, T(ε), of 4 has been attained using the E-k dispersion method. This analysis also involved the calculation of three ∆ valleys pertinent to the channel’s effectiveness in <001> orientation, with proximity nearer to 1 m0. The Schrodinger-Poisson equation has been analyzed with the Ballistic transport along the [001] z-direction in channel potential. A comparative assessment has been also performed between the lateral dimensions of rectangular nanowires with equal energy levels, utilizing both the tight-binding model and Density Functional Theory (DFT) techniques. In some high-frequency applications, a high transmission coefficient is beneficial to maximize the amount of energy or information that gets transmitted. Reducing leakage current would offer a technological pathway for performance improvement of high-frequency applications. The high ON-current (ION) has been obtained through the DFT approach between source and drain terminals is particularly desirable for applications demanding for fast switching speeds and high-performance computing. The strengths of both methods in hybrid approaches is a common strategy to achieve simulations that are both accurate and efficient. Notably, the nanowires subjected to hydrostatic strain, exhibiting enhanced mobility and exceptional electrostatic integrity, emerged as pivotal components for forthcoming technology nodes. This research augments the potential feasibility of strain-based Si nanowires, even at the 3 nm scale, in subsequent technological advancements.

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Section: Resultsmentioning

confidence: 79%

“…The transmission spectrum has been considered as fixed at a drain voltage of 0.6 V and a gate voltage of 0 V. The greater gate voltage causes a higher transmission when the top of the barrier height reduces. Under ballistic conditions, the current density has been considered to be normalized by the effective width (W eff = 4 W) [45].…”

Section: Resultsmentioning

confidence: 99%

Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

Paramasivam,

Gowthaman,

Srivastava

2024

Silicon

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“…The electronic properties of hydrogen-passivated compound semiconductor nanowires grown in different crystallographic orientations, specifically the band structures, band gaps, and effective electron masses, were discussed previously [ 27 , 28 , 29 , 30 ]. Horiguchi et al [ 31 ] have discussed the Silicon nanowire bandgap dependency on the wire width using effective mass theory calculations and using the boundary conditions envelope between wire confinement potential and the barrier height confinement potential’s finiteness.…”

Section: Basics Of Negf Modelingmentioning

confidence: 99%

“…The natural length λ n can be calculated by:

where ‘ ñ ’ is referred to as the effective number of gates. The idea was to design devices with both doped and undoped channels that use mid-gap gate material and yields the highest gate efficiencies for sub-10 nm technology [ 27 , 28 ]. The device’s short-channel behavior has been enhanced by raising the equivalent gate number ‘ ñ ’ and by maintaining the size of the gate length (approximately) five to ten times greater than that of the natural length λ n .…”

Section: Design Of Proposed Novel Gaas Nanowirementioning

confidence: 99%

Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications

2023

Self Cite

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This research work uses sp3d5s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La2O3) material and the orientation with z [001] using the Non-Equilibrium Green Function (NEGF) method, have been analyzed. The electrical characteristics and the parameters for the multi-gate nanowires have been realized. A nanowire comprises a heavily doped n+ donor source and drains doping and n-donor doping at the channel. The specified nanowire has a gate length and channel length of 15 nm each, a source-drain device length LSD = 35 nm, with La2O3 as 1 nm (gate dielectric oxide) each on the top and bottom of the core material (Si/GaAs). The Gate-All-Around (GAA) Si NW is superior with a high (ION/IOFF ratio) of 1.06 × 109, and a low leakage current, or OFF current (IOFF), of 3.84 × 10−14 A. The measured values of the mid-channel conduction band energy (Ec) and charge carrier density (ρ) at VG = VD = 0.5 V are −0.309 eV and 6.24 × 1023 C/cm3, respectively. The nanowires with hydrostatic strain have been determined by electrostatic integrity and increased mobility, making them a leading solution for upcoming technological nodes. The transverse dimensions of the rectangular nanowires with similar energy levels are realized and comparisons between Si and GaAs NWs have been performed.

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“…In recent years, various customized nanoparticles have been endlessly fabricated and researched for potential uses [ 1 , 2 , 3 ]. Brunton et al [ 4 ] described electrodes for cortex stimulation that successfully and safely transmit energy to neural tissue.…”

Section: Introductionmentioning

confidence: 99%

G-Optrode Bio-Interfaces for Non-Invasive Optical Cell Stimulation: Design and Evaluation

et al. 2022

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Biocompatibility and potential efficacy in biological applications rely on the bio-interactions of graphene nanoparticles with biological tissues. Analyzing and modulating cellular and device-level activity requires non-invasive electrical stimulation of cells. To address these needs, G-optrodes, bio-interfaces based on graphene, have been developed. These devices use light to stimulate cells without modifying their genetic code. Optoelectronic capabilities, in particular the capacity to transform light energy into electrical energy, will be maintained throughout the procedures of neural stimulation. G-optrodes have also been studied as thin films on a range of substrates, and they have been designed to function at a very small scale. This study examines the impact of G-optrode-based substrate designs on the optical stimulation of pheochromocytoma (PC-12). Graphene electrodes, known as G-optrodes, are responsible for converting light into electrical pulses with stimulating effects. G-optrode bio-interfaces provide a stimulus that is independent of wavelength range but is sensitive to changes in illuminance. The authors have performed a comprehensive investigation based on the correct effects of the medication in vitro, employing substrate-based G-optrode biointerfaces. In substrate-based systems, the authors have proven that graphene is biocompatible. PC-12 cells were cultured on graphene for 7 days. Based on the findings, 20-nm and 50-nm thick G-optrodes are being studied for possible use in biological and artificial retinal applications. The findings of this study highlight the significance of biocompatibility in the selection and use of G-optrodes for biomedical purposes.

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Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication—A Nanomaterial Approach

Cited by 10 publications

References 44 publications

Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications

G-Optrode Bio-Interfaces for Non-Invasive Optical Cell Stimulation: Design and Evaluation

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