MBE-grown high-efficiency GaInAsSb mid-infrared detectors operating under back illumination

Abstract

This paper describes molecular beam epitaxial growth, processing and room temperature characterization of lattice-matched GaInAsSb mid-infrared detectors on GaSb substrates for room temperature operation. For the first time, we demonstrate GaInAsSb detectors operating under backillumination, a critically important geometry for flip-chip-mounted focal plane arrays, and achieve performance equal or superior to frontilluminated detectors. Very high quantum efficiency and flat spectral response are achieved for the back-illuminated detectors due to improved carrier collection efficiency, photon recycling and reduced carrier recombination. In situ RHEED intensity oscillations and post-growth XRD are used for coarse and fine tuning of GaInAsSb lattice matching, respectively.

Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application

“…In recent years, this class of materials has become the subject of extensive investigations because of the progress in developing infrared lasers, light emitting diodes, photodiodes, solar cells and thermophotovoltaic (TPV) devices for mid-IR spectral range [1][2][3][4].…”

High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6μm

“…During the past few years, InGaAsSb photodetectors on GaSb substrate have been reported using different device structures and growth methods [6][7][8][9][10][11]. Among different growth methods, molecular beam epitaxy (MBE) has several advantages such as lower substrate temperature, non-equilibrium growth mechanism and precise control of the epilayers and interfaces, making it a preferred choice to achieve high-performance InGaAsSb photodetectors.…”

UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED DETECTOR PHOTODETECTOR GROWN ON GaAs SUBSTRATE

“…It also provides a relatively low tolerance to elevated temperatures because of high diffusion rates in the material [5]. On the other hand, GaxIn1-xAsySb1-y alloys offer covalent bonding which makes them more stable and a reliable replacement for MCT, especially in nearand mid-infrared regions [6][7][8][9][10]. Moreover, band gap of GaxIn1-xAsySb1-y alloys can be adjusted as desired between 1.7 and 4.9 μm by changing the concentrations of the constituent elements while remaining lattice matched to a GaSb substrate [6].…”