MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

Maranowski, K. D.; Peterson, Jeffrey M.; Johnson, S. M.; Varesi, J. B.; Childs, A. C.; Bornfreund, R. E.; Buell, A. A.; Radford, W. A.; Lyon, T. J. de; Jensen, J. Eric

doi:10.1007/bf02665844

Cited by 32 publications

(23 citation statements)

References 9 publications

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“…The molecular beam epitaxy (MBE) HgCdTe/Si technology has proven the ability to produce FPAs, which indicates that Si substrates offer a viable solution for cost-effective largearea HgCdTe epitaxy. [1][2][3] Additionally, Si provides a robust substrate for processing and its thermalexpansion is matched to the Si readout integrated circuit. In this case, the thin CdTe buffer layer and HgCdTe active layers are constrained to the thick Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

Vilela

Buell

Newton

et al. 2005

Journal of Elec Materi

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Middle wave infrared (MWIR) HgCdTe p-on-n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100-mm Si (112) substrates by molecular beam epitaxy (MBE) for large format 2,560 ϫ 512 focal plane arrays (FPAs). In order to meet the performance requirements needed for these FPAs, cutoff and doping uniformity across the 100-mm wafer are crucial. Reflection high-energy electron diffraction (RHEED), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectrometry (FTIR), x-ray, and etch pit density (EPD) were monitored to assess the reproducibility, uniformity, and quality of detector material grown. Material properties demonstrated include x-ray full width half maximum (FWHM) as low as 64 arc-sec, typical etch pit densities in mid-10 6 cm Ϫ2 , cutoff uniformity below 5% across the full wafer, and typical density of macrodefects Ͻ 1000 cm Ϫ2 . The detector quality was established by using test structure arrays (TSAs), which include miniarray diodes with the similar pitch as the detector array for easy measurement of critical parameters such as diode I-V characteristics and detector quantum efficiency. Typical I-V curves show excellent R o A products and strong reverse breakdown characteristics. Detector quantum efficiency was measured to be in the 60-70% range without an antireflection coating.

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Section: Introductionmentioning

confidence: 99%

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

Vilela

Buell

Newton

et al. 2005

Journal of Elec Materi

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“…Further details on HgCdTe/Si material growth and the DLHJ detector structure design are described elsewhere. [14][15][16] To allow the application of different process variations in fabricating detector arrays, a single 4-in. HgCdTe/Si was diced into smaller sizes prior to wafer processing.…”

Section: Resultsmentioning

confidence: 99%

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Smith

Venzor

Newton

et al. 2005

Journal of Elec Materi

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Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large format 2048 ϫ 2048, 20-µm unit-cell short wavelength infrared (SWIR) and 2560 ϫ 512, 25-µm unit-cell midwavelength infrared (MWIR) double-layer heterojunction (DLHJ) p-on-n HgCdTe FPAs fabricated using ICP processing exhibit Ͼ99% pixel operability. The HgCdTe FPAs are grown by molecular beam epitaxy (MBE) on Si substrates with suitable buffer layers. Midwavelength infrared detectors fabricated from 4-in. MBE-grown HgCdTe/Si substrates using ICP for mesa delineation and CdTe passivation etching demonstrate measured spectral characteristics, RoA product, and quantum efficiency comparable to detectors fabricated using wet chemical processes. Mechanical samples prepared to examine physical characteristics of ICP reveal plasma with high energy and low ion angle distribution, which is necessary for fine definition, high-aspect ratio mesa etching with accurate replication of photolithographic mask dimensions.

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“…The mechanism of formation and cause of defects are very complex and diverse. Different authors and groups agree that voids and micro-voids are directly related to Hg fluxes and substrate growth temperature [7][8][9]. A thermodynamic approach for void and micro-void prevention can be found at Ref.…”

Section: X-ray Rocking Curvesmentioning

confidence: 99%

Hg_(1‐x)Cd_xTe from short to long wave infrared on Si substrates grown by MBE

Vilela

Olsson

Reddy

et al. 2010

Phys. Status Solidi (c)

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In this paper, we show the power of using molecular beam epitaxy (MBE) for the growth of the mercury cadmium telluride (HgCdTe) system. Abrupt composition profiles, changes in doping levels, or switching doping types are easily performed. It is shown that high quality material is achieved with Hg(1‐x)CdxTe grown by MBE from a cadmium mole fraction of x =0.15 to x =0.72. Doping elements incorporation as low as 1015 cm‐3 for both n‐type and p‐type material as well as high incorporation levels >1018cm‐3 for both carrier types were achieved. Secondary ion mass spectrometry (SIMS) data, x‐ray data, Hall data, the influence of doping incorporation with cadmium content and growth rate, etch pit density (EPD), composition uniformity determined from Fourier transform infrared (FTIR) transmission spectroscopy, and surface defect maps from low to high x values are presented to illustrate the versatility and quality of HgCdTe material grown by MBE. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

Cited by 32 publications

References 9 publications

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Hg_(1‐x)Cd_xTe from short to long wave infrared on Si substrates grown by MBE

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MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

Cited by 32 publications

References 9 publications

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Hg(1‐x)CdxTe from short to long wave infrared on Si substrates grown by MBE

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Product

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Hg_(1‐x)Cd_xTe from short to long wave infrared on Si substrates grown by MBE