MBE growth of high quality GaN on LiGaO2

The growth of GaN on lithium gallate (LiGaO2) substrates for material integration

“…One such substrate, lithium gallate (LGO), LiGaO 2 , has been the focus of much interest in recent years. Our results [9][10][11][12][13][14] have shown that the structural quality, as determined by x-ray diffraction, is very good. We have also, recently, been able to demonstrate device-quality electrical properties.…”

“…Previously, difficulties with antiphase domains present in LGO limited the quality of the material. [9][10][11] Recently, the material quality has been improved significantly. In addition, the surface smoothness of the substrates has been variable.…”

Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy

“…Additionally, AlGaN can be lattice matched to LGO at growth temperature or room temperature by appropriate selection of Al composition. [3][4][5][6][7][8][9] Employing LGO as a substrate, we recently reported the electrical characteristics of the first demonstration of a twodimensional electron gas (2DEG) produced at an AlGaN/GaN heterostructure on LGO. The electron mobility was 731 cm 2 /Vs and sheet electron concentration was 1.3 × 10 13 cm -2 at room temperature measured on 1 cm × 1 cm sample without any patterning performed on the sample.…”

The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE

“…The wide band gap semiconductor GaN is grown on a variety of substrates including sapphire, which is the most commonly used [1], LiGaO 2 [2], GaAs [3], Si [4] and SiC [5]. Among these, 4H-SiC and 6H-SiC are favoarable due to their low lattice mismatch to GaN (∼3.4% for GaN/SiC, compared to ∼16% for GaN/sapphire), and their electrical and thermal properties.…”