MBE growth of high quality lattice-matched ZnS Se1- on GaAs substrates

Matsumura, N.; Tsubokura, M.; Saraie, Junji; Yodogawa, Y.

doi:10.1016/0022-0248(90)90735-4

Cited by 34 publications

(4 citation statements)

References 12 publications

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“…3(b). The ZnS,Sel, epilayer is known to be lattice-matched with GaAs substrate for the composition x of -0.055 at room temperature [2,3] and of -0.08 at growth temperature around 340 "C [4,5]. And it was reported that the lattice matching sulfur composition x at 11 K is almost the same as that at room temperature as expected from the thermal expansion coefficients 141.…”

Section: Resultsmentioning

confidence: 98%

Time-resolved photoluminescence of ZnS/sub x/Se/sub 1-x/(0</spl times/<0.12) epilayers on GaAs grown by MBE

Shin

Lee²,

Kim³

et al. 1997

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

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Abstracts.We have reported steady-state and time-resolved PL studies of ZnS,Sel, epilayers grown on GaAs substrate by molecular beam epitaxy with various sulfur compositions around the lattice matching composition (0 < x < 0.12). We have investigated the PL decay dynamics of ZnS,Sel, epilayers, and found that the decay time of the ZnS,Se,, epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other lattice-mismatched one. This is interpreted as indicatig that the crystalline defects induced by lattice mismatch with the substrate mainly act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnS,Sel, epilayers.

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Section: Resultsmentioning

confidence: 98%

Time-resolved photoluminescence of ZnS/sub x/Se/sub 1-x/(0</spl times/<0.12) epilayers on GaAs grown by MBE

Shin

Lee²,

Kim³

et al. 1997

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

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“…Unlimited ZnS-ZnSe mu-tual solubility makes possible obtaining of a ZnSe 1-x S x crystal with any x value [13,14]. The change of the ZnS/ZnSe ratio for ZnSe 1-x S x single crystals opens a wide range of possibilities for tuning their properties, including scintillation ones [14][15][16][17]. Moreover, ZnSe 1-x S x crystals have better transparency to their own radiation.…”

Section: Introductionmentioning

confidence: 99%

The growth, structure and luminescence properties of ZnSe1-xSx materials

Trubaieva¹,

Chaika²,

Lalayants³

2018

physics

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ZnSe1-xSx crystals with a higher content of selenium or sulfur ions adopt, respectively, a wurtzite or sphalerite structure. Luminescent properties of ZnSe1-xSx crystals are determined by ternary VZnZniOSe complexes for crystals with a cubic (sphalerite) lattice, and by sulfur vacancies VS for crystals with a hexagonal (wurtzite) lattice. Light output of ZnSe1-xSx crystals increases with increasing the sulfur content up to x = 0.3 and reaches the value of light output observed for ‘classic scintillator’ ZnSe(Te). At the same time, the ZnSe1-xSx bulk crystals possess better thermal stability at the same energy of emitted photons (hν ~ 2 eV) as compared to that of the ZnSe(Te) crystals.

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“…There are many methods such as metal-organic chemical vapor deposition [6], atomic layer epitaxy [7], molecular beam epitaxy [8] and so on can be employed to form the ZnSe 1 À x S x solid solution. Many studies which have calculated the lattice constant, band gap, optical properties and electronic properties of ZnSe 1 À x S x compounds can be found in earlier literatures [9][10][11].…”

Section: Introductionmentioning

confidence: 99%