The effects of growth temperature and V/III flux ratio on the GaAsSb crystalline quality were studied. Phase separation was suppressed within a narrow window of growth temperature. 1-μm-thick GaAsSb layers which exhibited single peaks in X-ray diffraction (XRD) measurement were successfully obtained grown at the optimum temperature. XRD and photoluminescence (PL) measurements revealed that V/III flux ratio also has an optimum value. It was found that the type-II InGaAs/GaAsSb superlattice with GaAsSb grown at the optimized growth condition seems to have an excellent optical property, because the PL peak energy exhibited peculiar dependence on temperature suggesting transition between the conduction band of InGaAs and the valance band of GaAsSb.
The Y-line emission in photoluminescence spectra at 11 K was studied in MBE-ZnSe and -ZnSSe (up to a sulfur content x=0.13) on GaAs. Compared with X-ray diffraction data, the Y-line seems to relate to misfit dislocations, and thus seems a good measure for checking lattice relaxation in ZnSe and ZnSSe epilayers with a sulfur content x<0.04. The critical thickness h
c determined from the Y-line is compared with the theoretical predictions of Matthews and Blakeslee. No Y-line was observed for sulfur content x>0.05, the reasons for which are discussed.
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