MBE growth of high-quality GaAsN bulk layers

Wang, J S; Kovsh, A. R.; Wei, Li-Chung; Y, J; Wu, Yuhan; Wang, P Y; Ustinov, V. M.

doi:10.1088/0957-4484/12/4/308

Cited by 23 publications

(16 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The incorporation of N in GaAs has been found to be temperature independent in a wide range of temperatures from 400°C to 480°C [19] or even higher temperatures [20,21]. However, for temperatures higher than that, N incorporation is strongly reduced.…”

Section: Resultsmentioning

confidence: 99%

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

et al. 2014

View full text Add to dashboard Cite

An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems related to the simultaneous presence of Sb and N, responsible for a significant degradation of photoluminescence (PL), are thereby solved allowing the achievement of room-temperature (RT) emission. A particularly strong improvement on the PL is obtained when the growth rate of the CL is increased. This is likely due to an improvement in the structural quality of the quaternary alloy that resulted from reduced strain and composition inhomogeneities. Nevertheless, a significant reduction of Sb and N incorporation was found when the growth rate was increased. Indeed, the incorporation of N is intrinsically limited to a maximum value of approximately 1.6% when the growth rate is at 2.0 ML s−1. Therefore, achieving RT emission and extending it somewhat beyond 1.3 μm were possible by means of a compromise among the growth conditions. This opens the possibility of exploiting the versatility on band structure engineering offered by this QD-CL structure in devices working at RT.PACS81.15.Hi (molecular beam epitaxy); 78.55.Cr (III-V semiconductors); 73.21.La (quantum dots)

show abstract

Section: Resultsmentioning

confidence: 99%

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

et al. 2014

View full text Add to dashboard Cite

show abstract

“…After heat treatment removal of native oxide from the GaAs (0 0 1) substrate, a GaAs buffer of 200 nm was grown at about 580 1C, and then 100 nm GaN x As 1Àx films were grown at 460 1C. The growth rate was 0.57 ML/s for GaAs, which is much lower than the conventional growth rates (higher than 1 ML/s) [5]. However, a 2D growth mode was realized during the whole growth stage as indicated by the reflective highenergy electron diffraction (RHEED), and the surface was very smooth (typical root-square-mean smoothness of 0.18 nm) as checked by atomic force microscope (AFM).…”

Section: Methodsmentioning

confidence: 99%

Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy

Liu

Xiang

Chua

et al. 2006

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Therefore, it is concluded that Indium stimulates phase separation regardless of strain compensation, probably because the presence of indium enhances migration of nitrogen atoms. 24 Figure 4(a) shows the dependence of the integrated PL intensity of GaAs and GaAsN samples grown at different temperatures on PL peak position as well as the corresponding PL spectra. One can see that the integrated PL intensity depends on growth temperature and is independent with the presence of nitrogen in the layers.…”

Section: Effect Of Growth Temperature and Growth Ratementioning

confidence: 99%

MBE-grown 1.3 micron InGaAsN/GaAs double QW VCSELs with very low-threshold current density under room temperature CW operation

et al. 2004

View full text Add to dashboard Cite

MBE growth of high quality diluted Nitride materials have been investigated. Photoluminescence intensity of high nitrogen content InGaAsN/GaAs SQW can be improved significantly by decreasing the growth temperature due to suppressd phase separation of InGaAsN alloy. The longest room temperature PL peak wavelength obtained in this study is 1.59 µm by increasing the nitrogen composition up to 5.3 %. High performance ridge-waveguide InGaAsN/GaAs single quantum well lasers at wavelength 1.3 µm have been demonstrated. Threshold current density of 0.57 KA/cm 2 was achieved for the lasers with a 3-µm ridge width and a 2-mm cavity length. Slope efficiencies of 0.67 W/A was obtained with 1 mm cavity length. The cw kink-free output power of wavelength 1.3 µm single lateral mode laser is more than 200 mW, and the maximum total wallplug efficiency of 29% was obtained. Furthermore, monolithic MBEgrown vertical cavity surface emitting lasers (VCSELs) on GaAs substrate with an active region based on InGaAsN/GaAs double quantum wells emitting at 1304 nm with record threshold current density below 2 KA/cm 2 also have been demonstrated. The CW output power exceeds 1 mW with an initial slope efficiency of 0.15 W/A. Such low threshold current density indicates the high quality of InGaAsN/GaAs QW active region.

show abstract

MBE growth of high-quality GaAsN bulk layers

Abstract: Abstract. In the present work we have carefully optimized the operation of plasma source and the growth parameters of GaAsN layers. We have demonstrated the possibility of incorporation about 1.5% of N into GaAs without decreasing the photoluminescence intensity.

Cited by 23 publications

References 14 publications

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy

MBE-grown 1.3 micron InGaAsN/GaAs double QW VCSELs with very low-threshold current density under room temperature CW operation

Contact Info

Product

Resources

About