MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates

Wijewarnasuriya, P. S.; Zandian, Majid; Edwall, D. D.; McLevige, W. V.; Chen, C. A.; Pasko, J. G.; Hildebrandt, G.; Chen, A. C.; Arias, J. M.; D'Souza, Arvind I.; Rujirawat, Saroj; Sivananthan, S.

doi:10.1007/s11664-998-0013-7

Cited by 57 publications

(29 citation statements)

References 12 publications

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“…In addition to applications such as opto-electronic devices and x-ray/ γ-ray detectors, Cd-based binary compounds grown on Si, such as CdTe/Si, have been used as composite substrates for HgCdTe material, an infrared (IR) detecting semiconductor system. [5][6][7][8][9][10] Similarly, ternary alloys, such as CdZnTe/Si and CdSeTe/Si, as well as quaternary compounds, such as CdZnSeTe/Si, can also be used as composite substrates specifically engineered for exact lattice matching with HgCdTe material designed to detect in the long wavelength (8-12 µm) IR region through careful control of the Se or Zn concentration. Growth of such materials with appropriate quality is expected to minimize dislocations generated at the HgCdTe epilayer-composite substrate interface by eliminating lattice mismatch.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates

Brill

Chen

Amirtharaj

et al. 2005

Journal of Elec Materi

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We have carried out a detailed study on the growth of Cd-based II-VI compounds on Si substrates using molecular beam epitaxy (MBE). CdTe, CdSe, CdSeTe, and CdZnSeTe layers were nucleated and grown on Si(211) substrates in order to study a broad range of semiconductor properties, such as crystal structure, fundamental bandgap, surface morphology, and defect and dislocation density as a function of the constituent elements. For structural characterization, we used transmission electron microscopy (TEM) and x-ray diffraction, which indicated that cubic Cd 1-x Se x Te material had been grown on Si substrates throughout the entire composition range. Likewise, photoreflectance (PR) and photoluminescence (PL) were used to measure the optical response in the near bandgap (E g ) region. Results indicated nonrandom ordering of CdSeTe/Si material. Studies on quaternary CdZnSeTe material indicated that Zn and Se concentrations directly impact surface morphology with extremely smooth surfaces obtained as Zn content is decreased.

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Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates

Brill

Chen

Amirtharaj

et al. 2005

Journal of Elec Materi

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“…In recent years the use of Si based composite substrates to fabricate mid-wavelength (3-5 µm) HgCdTe infrared detectors has been demonstrated. 5,6 However, to fabricate high performance long-wavelength diodes, the crystalline perfection in the Cd l _ XZn.Te buffer layer needs to be improved, and lateral variations in the ZnTe mole fraction must be reduced. The surface morphology must be specular and surface polarity should be of the B-face.…”

Section: Introductionmentioning

confidence: 99%

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Dhar

Boyd

Martinka

et al. 2000

Journal of Elec Materi

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“…Also, large bulk areas and high operating voltages significantly increase power consumption of the APDs. In addition, high quality HgCdTe is usually grown on the CdZnTe substrate, which is difficult to integrate with the silicon readout circuit due to different thermal expansion coefficients and a 19% lattice mismatch [146,147]. Finally, the fabrication cost associated with the CdZnTe substrate is also much higher than Si and Ge.…”

Section: Hgcdte Pdsmentioning

confidence: 99%

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

2015

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Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs) have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc.) and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

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MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates

Cited by 57 publications

References 12 publications

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

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