Measurement and simulation of short circuit current sharing under parallel connection: SiC MOSFETs and SiC Cascode JFETs

Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

“…Recent studies have provided valuable information on the SC reliability comparison of SiC MOSFET devices. For instance, the SCWT and the critical energy of SiC MOSFET with different technology and from different manufacture were compared in [3], [4]. In [5], the SC reliability of 650 V SiC planar and trench MOSFET was compared.…”

Analysis of 1st & 3rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS

“…Conventional Silicon power MOSFET regardless of its capability of high switching rate suffers from high on-state resistance resulting in high conduction losses. To cope with this problem a new generation of Silicon power MOSFETs called Silicon superjunction MOSFETs were introduced, [1]- [5] that are able to block high voltages with thinner and less resistive drift region. But, on the whole, Si-based MOSFETs are followed by some limitations in high voltage and high temperature applications that result in catching the attention of manufacturers to the Wide-bandgap semiconductors such as SiC so as to ameliorate the performance of the power MOSFETs.…”

Electrothermal Modelling and Measurements of Parallel-Connected V_THMismatched SiC MOSFETs under Inductive Load Switching

“…This paper investigates the impact of VTH variation on several parallel (up to 8 -self-imposed limit -the range can be extended to 10s of devices) SiC MOSFETs. The role of parameter variation in the short circuit performance of parallel devices has been investigated in [1,2,3] and unclamped inductive switching [4,5]. Due to the inherent variability of VTH in SiC MOSFETs, it is essential to select devices with minimal VTH variation to avoid unbalanced current sharing and unsynchronised switching between devices [6].…”