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In this paper, the reliability of planar, symmetrical, and asymmetrical SiC MOSFET is compared under repetitive short circuit shocks. Both static and dynamic parameters are tested after certain cycles to investigate the degradation pattern of the devices. It has been found out that the planar device has the highest reliability and is barely degraded for almost all parameters after 5000 cycles. The symmetrical device has the lowest reliability, which shows degradation after 50 cycles and ultimately fails after 141 cycles. The asymmetrical device shows significant degradation after 100 cycles and fails to turnon/off after 1000 cycles. For both symmetrical and asymmetrical devices, the degradation is directly linked to the damage of the gate oxide.

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To guarantee fast and reliable action of a 400 V DC SSCB with SiC MOSFET, circuit design and prototype development were carried out. Taking 400V DC microgrid as research background, firstly, the topology of DC SSCB with SiC MOSFET was introduced. Then, the drive circuit of SiC MOSFET, fault detection circuit, energy absorption circuit, and snubber circuit of the SSCB were designed and analyzed. Lastly, a prototype of the DC SSCB with SiC MOSFET was developed, tested, and compared with the SSCB with Silicon (Si) insulated gate bipolar transistor (IGBT). Experimental results show that the designed circuits of SSCB with SiC MOSFET are valid. Also, the developed miniature DC SSCB with the SiC MOSFET exhibits faster reaction to the fault and can reduce short circuit time and fault current in contrast with the SSCB with Si IGBT. Hence, the proposed SSCB can better meet the requirements of DC microgrid protection.

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